27.09%-efficiency silicon heterojunction back contact solar cell and going beyond

Genshun Wang, Qiao Su, Hanbo Tang, Hua Wu, Hao Lin (), Can Han, Tingting Wang, Chaowei Xue, Junxiong Lu, Liang Fang (), Zhenguo Li (), Xixiang Xu () and Pingqi Gao ()
Additional contact information
Genshun Wang: Shenzhen
Qiao Su: Shenzhen
Hanbo Tang: Shenzhen
Hua Wu: LONGi Central R&D Institute
Hao Lin: Shenzhen
Can Han: Shenzhen
Tingting Wang: LONGi Central R&D Institute
Chaowei Xue: LONGi Central R&D Institute
Junxiong Lu: LONGi Central R&D Institute
Liang Fang: LONGi Central R&D Institute
Zhenguo Li: LONGi Central R&D Institute
Xixiang Xu: LONGi Central R&D Institute
Pingqi Gao: Shenzhen

Nature Communications, 2024, vol. 15, issue 1, 1-12

Abstract: Abstract Crystalline-silicon heterojunction back contact solar cells represent the forefront of photovoltaic technology, but encounter significant challenges in managing charge carrier recombination and transport to achieve high efficiency. In this study, we produced highly efficient heterojunction back contact solar cells with a certified efficiency of 27.09% using a laser patterning technique. Our findings indicate that recombination losses primarily arise from the hole-selective contact region and polarity boundaries. We propose solutions to these issues and establish a clear relationship between contact resistivity, series resistance, and the design of the rear-side pattern. Furthermore, we demonstrate that the wafer edge becomes the main channel for current density loss caused by carrier recombination once electrical shading around the electron-selective contact region is mitigated. With the advanced nanocrystalline passivating contact, wafer edge passivation technologies and meticulous optimization of front anti-reflection coating and rear reflector, achieving efficiencies as high as 27.7% is feasible.

Date: 2024
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DOI: 10.1038/s41467-024-53275-5

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