Atomic-scale visualization of defect-induced localized vibrations in GaN

Hailing Jiang, Tao Wang (), Zhenyu Zhang, Fang Liu, Ruochen Shi, Bowen Sheng, Shanshan Sheng, Weikun Ge, Ping Wang, Bo Shen, Bo Sun, Peng Gao, Lucas Lindsay () and Xinqiang Wang ()
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Hailing Jiang: Peking University
Tao Wang: Peking University
Zhenyu Zhang: Peking University
Fang Liu: Peking University
Ruochen Shi: Peking University
Bowen Sheng: Peking University
Shanshan Sheng: Peking University
Weikun Ge: Peking University
Ping Wang: Peking University
Bo Shen: Peking University
Bo Sun: Tsinghua University
Peng Gao: Peking University
Lucas Lindsay: Oak Ridge National Laboratory
Xinqiang Wang: Peking University

Nature Communications, 2024, vol. 15, issue 1, 1-9

Abstract: Abstract Phonon engineering is crucial for thermal management in GaN-based power devices, where phonon-defect interactions limit performance. However, detecting nanoscale phonon transport constrained by III-nitride defects is challenging due to limited spatial resolution. Here, we used advanced scanning transmission electron microscopy and electron energy loss spectroscopy to examine vibrational modes in a prismatic stacking fault in GaN. By comparing experimental results with ab initio calculations, we identified three types of defect-derived modes: localized defect modes, a confined bulk mode, and a fully extended mode. Additionally, the PSF exhibits a smaller phonon energy gap and lower acoustic sound speeds than defect-free GaN, suggesting reduced thermal conductivity. Our study elucidates the vibrational behavior of a GaN defect via advanced characterization methods and highlights properties that may affect thermal behavior.

Date: 2024
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DOI: 10.1038/s41467-024-53394-z

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