Ultralow-pressure-driven polarization switching in ferroelectric membranes

Xinrui Yang, Lu Han (), Hongkai Ning, Shaoqing Xu, Bo Hao, Yi-Chi Li, Taotao Li, Yuan Gao, Shengjun Yan, Yueying Li, Chenyi Gu, Weisheng Li, Zhengbin Gu, Yingzhuo Lun, Yi Shi, Jian Zhou, Jiawang Hong, Xinran Wang (), Di Wu and Yuefeng Nie ()
Additional contact information
Xinrui Yang: Nanjing University
Lu Han: Nanjing University
Hongkai Ning: Nanjing University
Shaoqing Xu: Beijing Institute of Technology
Bo Hao: Nanjing University
Yi-Chi Li: Nanjing University
Taotao Li: Nanjing University
Yuan Gao: Nanjing University
Shengjun Yan: Nanjing University
Yueying Li: Nanjing University
Chenyi Gu: Nanjing University
Weisheng Li: Nanjing University
Zhengbin Gu: Nanjing University
Yingzhuo Lun: Beijing Institute of Technology
Yi Shi: Nanjing University
Jian Zhou: Nanjing University
Jiawang Hong: Beijing Institute of Technology
Xinran Wang: Nanjing University
Di Wu: Nanjing University
Yuefeng Nie: Nanjing University

Nature Communications, 2024, vol. 15, issue 1, 1-8

Abstract: Abstract Van der Waals integration of freestanding perovskite-oxide membranes with two-dimensional semiconductors has emerged as a promising strategy for developing high-performance electronics, such as field-effect transistors. In these innovative field-effect transistors, the oxide membranes have primarily functioned as dielectric layers, yet their great potential for structural tunability remains largely untapped. Free of epitaxial constraints by the substrate, these freestanding membranes exhibit remarkable structural tunability, providing a unique material system to achieve huge strain gradients and pronounced flexoelectric effects. Here, by harnessing the excellent structural tunability of PbTiO3 membranes and modulating the underlying substrate’s elasticity, we demonstrate the tip-pressure-induced polarization switching with an ultralow pressure (down to 0.06 GPa). Moreover, as an application demonstration, we develop a prototype non-volatile ferroelectric field-effect transistor integrated on silicon that can be operated mechanically and electrically. Our findings underscore the great potential of oxide membranes for utilization in advanced non-volatile electronics and highly sensitive pressure sensors.

Date: 2024
References: View references in EconPapers View complete reference list from CitEc
Citations:

Downloads: (external link)
https://www.nature.com/articles/s41467-024-53436-6 Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-53436-6

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/s41467-024-53436-6

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().