A nonvolatile magnon field effect transistor at room temperature

Jun Cheng, Rui Yu, Liang Sun, Kang He, Tongzhou Ji, Man Yang, Zeyuan Zhang, Xueli Hu, Heng Niu, Xi Yang, Peng Chen, Gong Chen, Jiang Xiao, Fengzhen Huang, Xiaomei Lu, Hongling Cai, Huaiyang Yuan (), Bingfeng Miao () and Haifeng Ding ()
Additional contact information
Jun Cheng: and Collaborative Innovation Center of Advanced Microstructures
Rui Yu: and Collaborative Innovation Center of Advanced Microstructures
Liang Sun: and Collaborative Innovation Center of Advanced Microstructures
Kang He: and Collaborative Innovation Center of Advanced Microstructures
Tongzhou Ji: and Collaborative Innovation Center of Advanced Microstructures
Man Yang: and Collaborative Innovation Center of Advanced Microstructures
Zeyuan Zhang: and Collaborative Innovation Center of Advanced Microstructures
Xueli Hu: and Collaborative Innovation Center of Advanced Microstructures
Heng Niu: and Collaborative Innovation Center of Advanced Microstructures
Xi Yang: and Collaborative Innovation Center of Advanced Microstructures
Peng Chen: and Collaborative Innovation Center of Advanced Microstructures
Gong Chen: and Collaborative Innovation Center of Advanced Microstructures
Jiang Xiao: Fudan University
Fengzhen Huang: and Collaborative Innovation Center of Advanced Microstructures
Xiaomei Lu: and Collaborative Innovation Center of Advanced Microstructures
Hongling Cai: and Collaborative Innovation Center of Advanced Microstructures
Huaiyang Yuan: Zhejiang University
Bingfeng Miao: and Collaborative Innovation Center of Advanced Microstructures
Haifeng Ding: and Collaborative Innovation Center of Advanced Microstructures

Nature Communications, 2024, vol. 15, issue 1, 1-8

Abstract: Abstract Information industry is one of the major drivers of the world economy. Its rapid growth, however, leads to severe heat problem which strongly hinders further development. This calls for a non-charge-based technology. Magnon, capable of transmitting spin information without electron movement, holds tremendous potential in post-Moore era. Given the cornerstone role of the field effect transistor in modern electronics, creating its magnonic equivalent is highly desired but remains a challenge. Here, we demonstrate a nonvolatile three-terminal lateral magnon field effect transistor operating at room temperature. The device consists of a ferrimagnetic insulator (Y3Fe5O12) deposited on a ferroelectric material [Pb(Mg1/3Nb2/3)0.7Ti0.3O3 or Pb(Zr0.52Ti0.48)O3], with three Pt stripes patterned on Y3Fe5O12 as the injector, gate, and detector, respectively. The magnon transport in Y3Fe5O12 can be regulated by the gate voltage pulses in a nonvolatile manner with a high on/off ratio. Our findings provide a solid foundation for designing energy-efficient magnon-based devices.

Date: 2024
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DOI: 10.1038/s41467-024-53524-7

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