Metal chalcogenide electron extraction layers for nip-type tin-based perovskite solar cells

Tianpeng Li, Bin Li, Yingguo Yang, Zuoming Jin, Zhiguo Zhang, Peilin Wang, Liangliang Deng, Yiqiang Zhan, Qinghong Zhang and Jia Liang ()
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Tianpeng Li: Fudan University
Bin Li: Donghua University
Yingguo Yang: Fudan University
Zuoming Jin: Fudan University
Zhiguo Zhang: Fudan University
Peilin Wang: Fudan University
Liangliang Deng: Fudan University
Yiqiang Zhan: Fudan University
Qinghong Zhang: Donghua University
Jia Liang: Fudan University

Nature Communications, 2024, vol. 15, issue 1, 1-10

Abstract: Abstract Tin-based perovskite solar cells have garnered attention for their biocompatibility, narrow bandgap, and long thermal carrier lifetime. However, nip-type tin-based perovskite solar cells have underperformed largely due to the indiscriminate use of metal oxide electron transport layers originally designed for nip-type lead-based perovskite solar cells. Here, we reveal that this underperformance is caused by oxygen vacancies and deeper energy levels in metal oxide. To address these issues, we propose a metal chalcogenide electron transport layer, specifically Sn(S0.92Se0.08)2, which circumvents the oxygen molecules desorption and impedes the Sn2+ oxidation. As a result, tin-based perovskite solar cells with Sn(S0.92Se0.08)2 demonstrate a VOC increase from 0.48 – 0.73 V and a power conversion efficiency boost from 6.98 – 11.78%. Additionally, these cells exhibit improved stability, retaining over 95% of their initial efficiency after 1632 h. Our findings showcase metal chalcogenides as promising candidates for future nip-type tin-based perovskite solar cell applications.

Date: 2024
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DOI: 10.1038/s41467-024-53713-4

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