Mott resistive switching initiated by topological defects

Alessandra Milloch (), Ignacio Figueruelo-Campanero (), Wei-Fan Hsu, Selene Mor, Simon Mellaerts, Francesco Maccherozzi, Larissa S. I. Veiga, Sarnjeet S. Dhesi, Mauro Spera, Jin Won Seo, Jean-Pierre Locquet, Michele Fabrizio, Mariela Menghini and Claudio Giannetti ()
Additional contact information
Alessandra Milloch: Università Cattolica del Sacro Cuore
Ignacio Figueruelo-Campanero: IMDEA Nanociencia
Wei-Fan Hsu: KU Leuven
Selene Mor: Università Cattolica del Sacro Cuore
Simon Mellaerts: KU Leuven
Francesco Maccherozzi: Diamond Light Source
Larissa S. I. Veiga: Diamond Light Source
Sarnjeet S. Dhesi: Diamond Light Source
Mauro Spera: Università Cattolica del Sacro Cuore
Jin Won Seo: KU Leuven
Jean-Pierre Locquet: KU Leuven
Michele Fabrizio: Scuola Internazionale Superiore di Studi Avanzati (SISSA)
Mariela Menghini: IMDEA Nanociencia
Claudio Giannetti: Università Cattolica del Sacro Cuore

Nature Communications, 2024, vol. 15, issue 1, 1-7

Abstract: Abstract Avalanche resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Despite its relevance for information processing, ultrafast electronics, neuromorphic devices, resistive memories and brain-inspired computation, the nature of the local stochastic fluctuations that drive the formation of metallic regions within the insulating state has remained hidden. Here, using operando X-ray nano-imaging, we have captured the origin of resistive switching in a V2O3-based device under working conditions. V2O3 is a paradigmatic Mott material, which undergoes a first-order metal-to-insulator phase transition together with a lattice transformation that breaks the threefold rotational symmetry of the rhombohedral metallic phase. We reveal a new class of volatile electronic switching triggered by nanoscale topological defects appearing in the shear-strain based order parameter that describes the insulating phase. Our results pave the way to the use of strain engineering approaches to manipulate such topological defects and achieve the full dynamical control of the electronic Mott switching. Topology-driven, reversible electronic transitions are relevant across a broad range of quantum materials, comprising transition metal oxides, chalcogenides and kagome metals.

Date: 2024
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DOI: 10.1038/s41467-024-53726-z

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