Single-crystalline High-κ GdOCl dielectric for two-dimensional field-effect transistors

Weiting Xu, Jiayang Jiang, Yujia Chen, Ning Tang, Chengbao Jiang and Shengxue Yang ()
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Weiting Xu: Beihang University Beijing
Jiayang Jiang: School of Physics
Yujia Chen: Beihang University Beijing
Ning Tang: School of Physics
Chengbao Jiang: Beihang University Beijing
Shengxue Yang: Beihang University Beijing

Nature Communications, 2024, vol. 15, issue 1, 1-10

Abstract: Abstract Two-dimensional (2D) dielectrics, integrated with high-mobility semiconductors, show great promise to overcome the scaling limits in miniaturized integrated circuits. However, the 2D dielectrics explored to date still face the challenges of low crystallinity, diminished dielectric constant, and the lack of effective synthesis methods. Here, we report the controllable synthesis of ultra-thin gadolinium oxychloride (GdOCl) nanosheets via a chloride hydrate-assisted chemical vapor deposition (CVD) method. The resultant GdOCl nanosheets display good dielectric properties, including a high dielectric constant (high-κ) of 15.3, robust breakdown field strengths (Ebd) exceeding 9.9 MV/cm, and minimal gate leakage currents of approximately 10−6 A/cm2. The top-gated GdOCl/MoS2 field-effect transistors (FETs) exhibit commendable switch characteristics, a negligible hysteresis of ~5 mV and a subthreshold swing down to 67.9 mV dec−1. The GdOCl/MoS2 FETs can also be employed to construct functional logic gates. Our study underscores the significant potential of the 2D GdOCl dielectric for innovative high-speed operated nanoelectronic devices.

Date: 2024
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DOI: 10.1038/s41467-024-53907-w

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