High-performance 2D electronic devices enabled by strong and tough two-dimensional polymer with ultra-low dielectric constant

Qiyi Fang, Kongyang Yi, Tianshu Zhai, Shisong Luo, Chen-yang Lin, Qing Ai, Yifan Zhu, Boyu Zhang, Gustavo A. Alvarez, Yanjie Shao, Haolei Zhou, Guanhui Gao, Yifeng Liu, Rui Xu, Xiang Zhang, Yuzhe Wang, Xiaoyin Tian, Honghu Zhang, Yimo Han, Hanyu Zhu, Yuji Zhao, Zhiting Tian, Yu Zhong, Zheng Liu () and Jun Lou ()
Additional contact information
Qiyi Fang: Rice University
Kongyang Yi: Nanyang Technological University
Tianshu Zhai: Rice University
Shisong Luo: Rice University
Chen-yang Lin: Rice University
Qing Ai: Rice University
Yifan Zhu: Rice University
Boyu Zhang: Rice University
Gustavo A. Alvarez: Cornell University
Yanjie Shao: Massachusetts Institute of Technology
Haolei Zhou: Cornell University
Guanhui Gao: Rice University
Yifeng Liu: Rice University
Rui Xu: Rice University
Xiang Zhang: Rice University
Yuzhe Wang: Cornell University
Xiaoyin Tian: Rice University
Honghu Zhang: Brookhaven National Laboratory
Yimo Han: Rice University
Hanyu Zhu: Rice University
Yuji Zhao: Rice University
Zhiting Tian: Cornell University
Yu Zhong: Cornell University
Zheng Liu: Nanyang Technological University
Jun Lou: Rice University

Nature Communications, 2024, vol. 15, issue 1, 1-9

Abstract: Abstract As the feature size of microelectronic circuits is scaling down to nanometer order, the increasing interconnect crosstalk, resistance-capacitance (RC) delay and power consumption can limit the chip performance and reliability. To address these challenges, new low-k dielectric (k 15 GPa). We also demonstrated the improved performance of monolayer MoS2 field-effect-transistors when utilizing 2DP-F thin films as dielectric substrates.

Date: 2024
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DOI: 10.1038/s41467-024-53935-6

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