Development of fin-LEDs for next-generation inorganic displays using face-selective dielectrophoretic assembly

SeungJe Lee, Yun Jae Eo, Minji Ko, Soomin Ahn, Selim Yun, Hyeng Jin Kim, Eunha Hong, Yuna Kwon, Huiyeong Kang, Yong Jae Lee, Gang Yeol Yoo, Keyong Nam Lee, Jae Kyu Song, Jong Kyu Kim, Hyun Min Cho and Young Rag Do ()
Additional contact information
SeungJe Lee: Kookmin University
Yun Jae Eo: Kookmin University
Minji Ko: Kookmin University
Soomin Ahn: Kookmin University
Selim Yun: Kookmin University
Hyeng Jin Kim: Kookmin University
Eunha Hong: Kookmin University
Yuna Kwon: Kookmin University
Huiyeong Kang: Kookmin University
Yong Jae Lee: Kookmin University
Gang Yeol Yoo: Korea Electronics Technology Institute
Keyong Nam Lee: Kookmin University
Jae Kyu Song: Kyung Hee University
Jong Kyu Kim: Pohang University of Science and Technology (POSTECH)
Hyun Min Cho: Korea Electronics Technology Institute
Young Rag Do: Kookmin University

Nature Communications, 2024, vol. 15, issue 1, 1-10

Abstract: Abstract Micro-light-emitting diodes offer vibrant colors and energy-efficient performance, holding promise for next-generation inorganic displays. However, their widespread adoption requires the development of cost-effective chips and low-defect pixelation processes. Addressing these challenges, nanorod-light-emitting diodes utilize inkjet and dielectrophoretic assembly techniques. Nevertheless, the small volume and edge-directed emission of nanorod-light-emitting diodes necessitate brightness and light extraction improvements. As an alternative, we propose dielectrophoretic-friendly fin-light-emitting diodes, designed to enhance brightness and light extraction efficiency through face-selective dielectrophoretic assembly technology. Our results confirm the potential for next-generation inorganic displays, with a wafer utilization ratio exceeding 90%, a vertical assembly ratio of 91.3%, and a pixel production yield of 99.93%. Moreover, blue fin-light-emitting diodes achieve an external quantum efficiency of 9.1% and a brightness of 8640 cd m−2 at 5.0 V, which, even at this early stage, are comparable to existing technologies.

Date: 2024
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DOI: 10.1038/s41467-024-53965-0

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