Oriented Bi2Te3-based films enabled high performance planar thermoelectric cooling device for hot spot elimination

Guoying Dong, Jianghe Feng, Guojuan Qiu, Yuxuan Yang, Qiyong Chen, Yang Xiong, Haijun Wu (), Yifeng Ling, Lili Xi, Chen Long, Jibao Lu, Yixin Qiao, Guijuan Li, Juan Li (), Ruiheng Liu () and Rong Sun
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Guoying Dong: Chinese Academy of Sciences
Jianghe Feng: Chinese Academy of Sciences
Guojuan Qiu: Chinese Academy of Sciences
Yuxuan Yang: Xi’an Jiaotong University
Qiyong Chen: Shanghai University
Yang Xiong: Chinese Academy of Sciences
Haijun Wu: Xi’an Jiaotong University
Yifeng Ling: Chinese Academy of Sciences
Lili Xi: Shanghai University
Chen Long: Chinese Academy of Sciences
Jibao Lu: Chinese Academy of Sciences
Yixin Qiao: Chinese Academy of Sciences
Guijuan Li: Chinese Academy of Sciences
Juan Li: Chinese Academy of Sciences
Ruiheng Liu: Chinese Academy of Sciences
Rong Sun: Chinese Academy of Sciences

Nature Communications, 2024, vol. 15, issue 1, 1-10

Abstract: Abstract Film-thermoelectric cooling devices are expected to provide a promising active thermal management solution with the continues increase of the power density of integrated circuit chips and other electronic devices. However, because the microstructure-related performance of thermoelectric films has not been perfectly matched with the device configuration, the potential of planar devices on chip heat dissipation has still not been fully exploited. Here, by liquid Te assistant growth method, highly (00 l) orientated Bi2Te3-based films which is comparable to single crystals are obtained in polycrystal films in this work. The high mobility stem from high orientation and low lattice thermal conductivity resulting from excess Te induced staggered stacking faults leads to high in-plane zT values ~1.53 and ~1.10 for P-type Bi0.4Sb1.6Te3 and N-type Bi2Te3 films, respectively. The planar devices basing on the geometrically designed high orientation films produce a remarkable temperature reduction of ~8.2 K in the hot spot elimination experiment, demonstrating the great benefit of Te assistant growth method for oriented planar Bi2Te3 films and planar devices devices design, and also bring great enlightenment to the next generation active thermal management for integrated circuits.

Date: 2024
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DOI: 10.1038/s41467-024-54017-3

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