Precise p-type and n-type doping of two-dimensional semiconductors for monolithic integrated circuits

Yu Pan, Tao Jian, Pingfan Gu, Yiwen Song, Qi Wang, Bo Han, Yuqia Ran, Zemin Pan, Yanping Li, Wanjin Xu, Peng Gao, Chendong Zhang (), Jun He (), Xiaolong Xu () and Yu Ye ()
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Yu Pan: Peking University
Tao Jian: Wuhan University
Pingfan Gu: Peking University
Yiwen Song: Peking University
Qi Wang: Peking University
Bo Han: Peking University
Yuqia Ran: Peking University
Zemin Pan: Wuhan University
Yanping Li: Peking University
Wanjin Xu: Peking University
Peng Gao: Collaborative Innovation Center of Quantum Matter
Chendong Zhang: Wuhan University
Jun He: Wuhan University
Xiaolong Xu: Peking University
Yu Ye: Peking University

Nature Communications, 2024, vol. 15, issue 1, 1-8

Abstract: Abstract The controllable fabrication of patterned p-type and n-type channels with precise doping control presents a significant challenge, impeding the realization of complementary metal-oxide-semiconductor (CMOS) logic using a single van der Waals material. However, such an achievement could offer substantial benefits by enabling continued transistor scaling and unprecedented interlayer interconnect technologies. In this study, we devise a precise method for two-dimensional (2D) semiconductor substitutional doping, which allows for the production of wafer-scale 2H-MoTe2 thin films with specific p-type or n-type doping. Notably, we extend this approach to the synthesis of spatially selective doped 2H-MoTe2 thin films via a one-step growth method, facilitating the monolithic integration of p-type and n-type semiconductor channels. Leveraging this advancement, we successfully fabricate a chip-sized 2D CMOS inverter array that demonstrates excellent device performance and yield. Collectively, these findings represent a significant stride towards the practical incorporation of 2D semiconductors in very large-scale integration technology.

Date: 2024
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DOI: 10.1038/s41467-024-54050-2

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