Giant tunnel electroresistance through a Van der Waals junction by external ferroelectric polarization

Guangdi Feng, Yifei Liu, Qiuxiang Zhu (), Zhenyu Feng, Shengwen Luo, Cuijie Qin, Luqiu Chen, Yu Xu, Haonan Wang, Muhammad Zubair, Ke Qu, Chang Yang, Shenglan Hao, Fangyu Yue, Chungang Duan, Junhao Chu and Bobo Tian ()
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Guangdi Feng: East China Normal University
Yifei Liu: East China Normal University
Qiuxiang Zhu: East China Normal University
Zhenyu Feng: East China Normal University
Shengwen Luo: East China Normal University
Cuijie Qin: East China Normal University
Luqiu Chen: East China Normal University
Yu Xu: East China Normal University
Haonan Wang: East China Normal University
Muhammad Zubair: East China Normal University
Ke Qu: East China Normal University
Chang Yang: East China Normal University
Shenglan Hao: East China Normal University
Fangyu Yue: East China Normal University
Chungang Duan: East China Normal University
Junhao Chu: East China Normal University
Bobo Tian: East China Normal University

Nature Communications, 2024, vol. 15, issue 1, 1-10

Abstract: Abstract The burgeoning interest in two-dimensional semiconductors stems from their potential as ultrathin platforms for next-generation transistors. Nonetheless, there persist formidable challenges in fully obtaining high-performance complementary logic components and the underlying mechanisms for the polarity modulation of transistors are not yet fully understood. Here, we exploit both ferroelectric domain-based nonvolatile modulation of Fermi level in transitional metal dichalcogenides (MoS2) and quantum tunneling through nanoscale hexagonal boron nitride (h-BN). Our prototype devices, termed as vertical tunneling ferroelectric field-effect transistor, utilizes a Van der Waals MoS2/h-BN/metal tunnel junction as the channel. The Fermi level of MoS2 is bipolarly tuned by ferroelectric domains and sensitively detected by the direct quantum tunneling strength across the junction, demonstrating an impressive electroresistance ratio of up to 109 in the vertical tunneling ferroelectric field-effect transistor. It consumes only 0.16 fJ of energy to open a ratio window exceeding 104. This work not only validates the effectiveness of tailored tunnel barriers in manipulating electronic flow but also highlights a new avenue for the design flexibility and functional versatility of advanced ferroelectric memory technology.

Date: 2024
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DOI: 10.1038/s41467-024-54114-3

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