Multifunctional 2D FETs exploiting incipient ferroelectricity in freestanding SrTiO3 nanomembranes at sub-ambient temperatures

Dipanjan Sen, Harikrishnan Ravichandran, Mayukh Das, Pranavram Venkatram, Sooho Choo, Shivasheesh Varshney, Zhiyu Zhang, Yongwen Sun, Jay Shah, Shiva Subbulakshmi Radhakrishnan, Akash Saha, Sankalpa Hazra, Chen Chen, Joan M. Redwing, K. Andre Mkhoyan, Venkatraman Gopalan, Yang Yang, Bharat Jalan and Saptarshi Das ()
Additional contact information
Dipanjan Sen: Penn State University
Harikrishnan Ravichandran: Penn State University
Mayukh Das: Penn State University
Pranavram Venkatram: Penn State University
Sooho Choo: University of Minnesota
Shivasheesh Varshney: University of Minnesota
Zhiyu Zhang: Penn State University
Yongwen Sun: Penn State University
Jay Shah: University of Minnesota
Shiva Subbulakshmi Radhakrishnan: Penn State University
Akash Saha: Penn State University
Sankalpa Hazra: Penn State University
Chen Chen: Penn State University
Joan M. Redwing: Penn State University
K. Andre Mkhoyan: University of Minnesota
Venkatraman Gopalan: Penn State University
Yang Yang: Penn State University
Bharat Jalan: University of Minnesota
Saptarshi Das: Penn State University

Nature Communications, 2024, vol. 15, issue 1, 1-12

Abstract: Abstract Incipient ferroelectricity bridges traditional dielectrics and true ferroelectrics, enabling advanced electronic and memory devices. Firstly, we report incipient ferroelectricity in freestanding SrTiO3 nanomembranes integrated with monolayer MoS2 to create multifunctional devices, demonstrating stable ferroelectric order at low temperatures for cryogenic memory devices. Our observation includes ultra-fast polarization switching (~10 ns), low switching voltage (

Date: 2024
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DOI: 10.1038/s41467-024-54231-z

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