Stacking selected polarization switching and phase transition in vdW ferroelectric α-In2Se3 junction devices

Yuyang Wu, Tianjiao Zhang, Deping Guo, Bicheng Li, Ke Pei, Wenbin You, Yiqian Du, Wanchen Xing, Yuxiang Lai, Wei Ji (), Yuda Zhao () and Renchao Che ()
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Yuyang Wu: Fudan University
Tianjiao Zhang: Zhejiang University
Deping Guo: Sichuan Normal University
Bicheng Li: Fudan University
Ke Pei: Fudan University
Wenbin You: Fudan University
Yiqian Du: Fudan University
Wanchen Xing: Donghua University
Yuxiang Lai: Hainan University
Wei Ji: Renmin University of China
Yuda Zhao: Zhejiang University
Renchao Che: Fudan University

Nature Communications, 2024, vol. 15, issue 1, 1-10

Abstract: Abstract The structure and dynamics of ferroelectric domain walls are essential for polarization switching in ferroelectrics, which remains relatively unexplored in two-dimensional ferroelectric α-In2Se3. Interlayer interactions engineering via selecting the stacking order in two-dimensional materials allows modulation of ferroelectric properties. Here, we report stacking-dependent ferroelectric domain walls in 2H and 3R stacked α-In2Se3, elucidating the resistance switching mechanism in ferroelectric semiconductor-metal junction devices. In 3R α-In2Se3, the in-plane movement of out-of-plane ferroelectric domain walls yield a large hysteresis window. Conversely, 2H α-In2Se3 devices favor in-plane domain walls and out-of-plane domain wall motion, producing a small hysteresis window. High electric fields induce a ferro-paraelectric phase transition of In2Se3, where 3R In2Se3 reaches the transition through intralayer atomic gliding, while 2H In2Se3 undergoes a complex process comprising intralayer bond dissociation and interlayer bond reconstruction. Our findings demonstrate tunable ferroelectric properties via stacking configurations, offering an expanded dimension for material engineering in ferroelectric devices.

Date: 2024
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DOI: 10.1038/s41467-024-54841-7

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