Strained two-dimensional tungsten diselenide for mechanically tunable exciton transport

Jin Myung Kim, Kwang-Yong Jeong, Soyeong Kwon, Jae-Pil So, Michael Cai Wang, Peter Snapp, Hong-Gyu Park () and SungWoo Nam ()
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Jin Myung Kim: University of Illinois at Urbana-Champaign
Kwang-Yong Jeong: Chungnam National University
Soyeong Kwon: University of California, Irvine
Jae-Pil So: Seoul National University
Michael Cai Wang: University of Illinois at Urbana-Champaign
Peter Snapp: University of Illinois at Urbana-Champaign
Hong-Gyu Park: Seoul National University
SungWoo Nam: University of California, Irvine

Nature Communications, 2024, vol. 15, issue 1, 1-9

Abstract: Abstract Tightly bound electron-hole pairs (excitons) hosted in atomically-thin semiconductors have emerged as prospective elements in optoelectronic devices for ultrafast and secured information transfer. The controlled exciton transport in such excitonic devices requires manipulating potential energy gradient of charge-neutral excitons, while electrical gating or nanoscale straining have shown limited efficiency of exciton transport at room temperature. Here, we report strain gradient induced exciton transport in monolayer tungsten diselenide (WSe2) across microns at room temperature via steady-state pump-probe measurement. Wrinkle architecture enabled optically-resolvable local strain (2.4%) and energy gradient (49 meV/μm) to WSe2. We observed strain gradient induced flux of high-energy excitons and emission of funneled, low-energy excitons at the 2.5 μm-away pump point with nearly 45% of relative emission intensity compared to that of excited excitons. Our results strongly support the strain-driven manipulation of exciton funneling in two-dimensional semiconductors at room temperature, opening up future opportunities of 2D straintronic exciton devices.

Date: 2024
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DOI: 10.1038/s41467-024-55135-8

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