Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS2

Xiuzhen Li, Biao Qin, Yaxian Wang, Yue Xi, Zhiheng Huang, Mengze Zhao, Yalin Peng, Zitao Chen, Zitian Pan, Jundong Zhu, Chenyang Cui, Rong Yang, Wei Yang, Sheng Meng, Dongxia Shi, Xuedong Bai, Can Liu, Na Li, Jianshi Tang (), Kaihui Liu (), Luojun Du () and Guangyu Zhang ()
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Xiuzhen Li: Chinese Academy of Sciences
Biao Qin: Peking University
Yaxian Wang: Chinese Academy of Sciences
Yue Xi: Tsinghua University
Zhiheng Huang: Chinese Academy of Sciences
Mengze Zhao: Peking University
Yalin Peng: Chinese Academy of Sciences
Zitao Chen: Chinese Academy of Sciences
Zitian Pan: Chinese Academy of Sciences
Jundong Zhu: Chinese Academy of Sciences
Chenyang Cui: Chinese Academy of Sciences
Rong Yang: Hunan University
Wei Yang: Chinese Academy of Sciences
Sheng Meng: Chinese Academy of Sciences
Dongxia Shi: Chinese Academy of Sciences
Xuedong Bai: Chinese Academy of Sciences
Can Liu: Renmin University of China
Na Li: Chinese Academy of Sciences
Jianshi Tang: Tsinghua University
Kaihui Liu: Peking University
Luojun Du: Chinese Academy of Sciences
Guangyu Zhang: Chinese Academy of Sciences

Nature Communications, 2024, vol. 15, issue 1, 1-10

Abstract: Abstract Recent advances have uncovered an exotic sliding ferroelectric mechanism, which endows to design atomically thin ferroelectrics from non-ferroelectric parent monolayers. Although notable progress has been witnessed in understanding the fundamental properties, functional devices based on sliding ferroelectrics remain elusive. Here, we demonstrate the rewritable, non-volatile memories at room-temperature with a two-dimensional (2D) sliding ferroelectric semiconductor of rhombohedral-stacked bilayer MoS2. The 2D sliding ferroelectric memories (SFeMs) show superior performances with a large memory window of >8 V, a high conductance ratio of above 106, a long retention time of >10 years, and a programming endurance greater than 104 cycles. Remarkably, flexible SFeMs are achieved with state-of-the-art performances competitive to their rigid counterparts and maintain their performances post bending over 103 cycles. Furthermore, synapse-specific Hebbian forms of plasticity and image recognition with a high accuracy of 97.81% are demonstrated based on flexible SFeMs.

Date: 2024
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DOI: 10.1038/s41467-024-55333-4

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