Intervalence plasmons in boron-doped diamond

Souvik Bhattacharya, Jonathan Boyd, Sven Reichardt, Valentin Allard, Amir Hossein Talebi, Nicolò Maccaferri, Olga Shenderova, Aude L. Lereu, Ludger Wirtz, Giuseppe Strangi () and R. Mohan Sankaran ()
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Souvik Bhattacharya: University of Illinois Urbana-Champaign
Jonathan Boyd: Case Western Reserve University
Sven Reichardt: University of Luxembourg
Valentin Allard: Institut Fresnel
Amir Hossein Talebi: University of Luxembourg
Nicolò Maccaferri: Umeå University
Olga Shenderova: Adamas Nanotechnologies
Aude L. Lereu: Institut Fresnel
Ludger Wirtz: University of Luxembourg
Giuseppe Strangi: Case Western Reserve University
R. Mohan Sankaran: University of Illinois Urbana-Champaign

Nature Communications, 2025, vol. 16, issue 1, 1-8

Abstract: Abstract Doped semiconductors can exhibit metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low-energy excitations is provided by valence electron energy loss spectroscopy and near-field infrared spectroscopy. The measured spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Our calculations also reveal that the real part of the dielectric function exhibits a crossover characteristic of metallicity. These results suggest a new mechanism for inducing plasmon-like behavior in doped semiconductors, and the possibility of attaining such properties in diamond, a key emerging material for quantum information technologies.

Date: 2025
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DOI: 10.1038/s41467-024-55353-0

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