Enhanced non-classical electrostriction in strained tetragonal ceria

Simone Santucci (), Milica Vasiljevic, Haiwu Zhang, Victor Buratto Tinti, Achilles Bergne, Armando A. Morin-Martinez, Sandeep Kumar Chaluvadi, Pasquale Orgiani, Simone Sanna, Anton Lyksborg-Andersen, Thomas Willum Hansen, Ivano E. Castelli, Nini Pryds and Vincenzo Esposito ()
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Simone Santucci: Technical University of Denmark
Milica Vasiljevic: Technical University of Denmark
Haiwu Zhang: Technical University of Denmark
Victor Buratto Tinti: Technical University of Denmark
Achilles Bergne: Technical University of Denmark
Armando A. Morin-Martinez: Technical University of Denmark
Sandeep Kumar Chaluvadi: CNR-IOM Istituto Officina dei Materiali
Pasquale Orgiani: CNR-IOM Istituto Officina dei Materiali
Simone Sanna: Università di Roma Tor Vergata
Anton Lyksborg-Andersen: Technical University of Denmark
Thomas Willum Hansen: Technical University of Denmark
Ivano E. Castelli: Technical University of Denmark
Nini Pryds: Technical University of Denmark
Vincenzo Esposito: Technical University of Denmark

Nature Communications, 2025, vol. 16, issue 1, 1-11

Abstract: Abstract Electrostriction is the upsurge of strain under an electric field in any dielectric material. Oxygen-defective metal oxides, such as acceptor-doped ceria, exhibit high electrostriction 10-17 m2V-2 values, which can be further enhanced via interface engineering at the nanoscale. This effect in ceria is “non-classical” as it arises from an intricate relation between defect-induced polarisation and local elastic distortion in the lattice. Here, we investigate the impact of mismatch strain when epitaxial Gd-doped CeO2 thin films are grown on various single-crystal substrates. We demonstrate that varying the compressive and tensile strain can fine-tune the electromechanical response. The electrostriction coefficients achieve a large M11 ≈ 3.6·10-15 m2V-2 in lattices of in-plane compressed films, i.e., a positive tetragonality (c/a-1 > 0), with stress above 3 GPa at the film/substrate interface. Chemical and structural analysis suggests that the high electrostriction stems from anisotropic distortions in the local lattice strain, which lead to constructively oriented elastic dipoles and Ce3+ electronic defects.

Date: 2025
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DOI: 10.1038/s41467-024-55393-6

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