Remote epitaxy and exfoliation of vanadium dioxide via sub-nanometer thick amorphous interlayer

Chang Liu, Xing Li, Yang Wang, Zhi Zheng, Binmin Wu, Wenhao He, Xiang Dong, Ziyu Zhang, Bingxin Chen, Jiayuan Huang, Zhenghua An, Changlin Zheng, Gaoshan Huang and Yongfeng Mei ()
Additional contact information
Chang Liu: Fudan University
Xing Li: Fudan University
Yang Wang: Fudan University
Zhi Zheng: Fudan University
Binmin Wu: Chinese Academy of Sciences
Wenhao He: Fudan University
Xiang Dong: Fudan University
Ziyu Zhang: Fudan University
Bingxin Chen: Fudan University
Jiayuan Huang: Fudan University
Zhenghua An: Fudan University
Changlin Zheng: Fudan University
Gaoshan Huang: Fudan University
Yongfeng Mei: Fudan University

Nature Communications, 2025, vol. 16, issue 1, 1-9

Abstract: Abstract The recently emerged remote epitaxy technique, utilizing 2D materials (mostly graphene) as interlayers between the epilayer and the substrate, enables the exfoliation of crystalline nanomembranes from the substrate, expanding the range of potential device applications. However, remote epitaxy has been so far applied to a limited range of material systems, owing to the need of stringent growth conditions to avoid graphene damaging, and has therefore remained challenging for the synthesis of oxide nanomembranes. Here, we demonstrate the remote epitaxial growth of an oxide nanomembrane (vanadium dioxide, VO2) with a sub-nanometer thick amorphous interlayer, which can withstand potential sputtering-induced damage and oxidation. By removing the amorphous interlayer, a 4-inch wafer-scale freestanding VO2 nanomembrane can be obtained, exhibiting intact crystalline structure and physical properties. In addition, multi-shaped freestanding infrared bolometers are fabricated based on the epitaxial VO2 nanomembranes, showing high detectivity and low current noise. Our strategy provides a promising way to explore various freestanding heteroepitaxial oxide materials for future large-scale integrated circuits and functional devices.

Date: 2025
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DOI: 10.1038/s41467-024-55402-8

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