Antiferromagnetic semimetal terahertz photodetectors enhanced through weak localization

Dong Wang, Liu Yang, Zhen Hu, Fang Wang (), Yage Yang, Xiaokai Pan, Zhuo Dong, Shijian Tian, Libo Zhang, Li Han, Mengjie Jiang, Keqin Tang, Fuxing Dai, Kai Zhang (), Wei Lu, Xiaoshuang Chen, Lin Wang () and Weida Hu
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Dong Wang: Chinese Academy of Sciences
Liu Yang: University of Science and Technology of China
Zhen Hu: Chinese Academy of Sciences
Fang Wang: Chinese Academy of Sciences
Yage Yang: University of Chinese Academy of Sciences
Xiaokai Pan: Chinese Academy of Sciences
Zhuo Dong: Chinese Academy of Sciences
Shijian Tian: Donghua University
Libo Zhang: Chinese Academy of Sciences
Li Han: China Jiliang University
Mengjie Jiang: Chinese Academy of Sciences
Keqin Tang: University of Science and Technology of China
Fuxing Dai: Chinese Academy of Sciences
Kai Zhang: Chinese Academy of Sciences
Wei Lu: Chinese Academy of Sciences
Xiaoshuang Chen: Chinese Academy of Sciences
Lin Wang: Chinese Academy of Sciences
Weida Hu: Chinese Academy of Sciences

Nature Communications, 2025, vol. 16, issue 1, 1-10

Abstract: Abstract Effective detection is critical for terahertz applications, yet it remains hindered by the unclear mechanisms that necessitate a deeper understanding of photosensitive materials with exotic physical phenomena. Here, we investigate the terahertz detection capabilities of the two-dimensional antiferromagnetic semimetal NbFeTe2. Our study reveals that the interaction between antiferromagnetic magnetic moments and electron spin induces disordered carriers to hop between localized states, resulting in a nonlinear increase in responsivity as temperature decreases. We integrate asymmetric electrodes to generate a sufficient Seebeck potential, enabling carriers to overcome the barrier of localized states and achieve reordering at room temperature. Additionally, the self-powered performance of the NbFeTe₂/graphene heterojunction is optimized by the built-in electric field, achieving peak responsivity of 220 V W-1 and noise equivalent power of

Date: 2025
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DOI: 10.1038/s41467-024-55426-0

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