Room temperature ferroelectricity in monolayer graphene sandwiched between hexagonal boron nitride

Fanrong Lin, Xiaoyu Xuan, Zhonghan Cao, Zhuhua Zhang (), Ying Liu, Minmin Xue, Yang Hang, Xin Liu, Yizhou Zhao, Libo Gao, Wanlin Guo () and Yanpeng Liu ()
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Fanrong Lin: Nanjing University of Aeronautics and Astronautics
Xiaoyu Xuan: Nanjing University of Aeronautics and Astronautics
Zhonghan Cao: Zhangjiang Laboratory
Zhuhua Zhang: Nanjing University of Aeronautics and Astronautics
Ying Liu: Nanjing University of Aeronautics and Astronautics
Minmin Xue: Nanjing University of Aeronautics and Astronautics
Yang Hang: Nanjing Tech University (Nanjing Tech)
Xin Liu: Nanjing University of Aeronautics and Astronautics
Yizhou Zhao: Nanjing University of Aeronautics and Astronautics
Libo Gao: Nanjing University
Wanlin Guo: Nanjing University of Aeronautics and Astronautics
Yanpeng Liu: Nanjing University of Aeronautics and Astronautics

Nature Communications, 2025, vol. 16, issue 1, 1-8

Abstract: Abstract The ferroelectricity in stacked van der Waals multilayers through interlayer sliding holds great promise for ultrathin high-density memory devices, yet mostly subject to weak polarization and cryogenic operating condition. Here, we demonstrate robust room-temperature ferroelectricity in monolayer graphene sandwiched between hexagonal boron nitride layers with a rhombohedral-like stacking (i.e., ABC-like stacking). The system exhibits an unconventional negative capacitance and record high electric polarization of 1.76 μC/cm2 among reported sliding ferroelectrics to date. The ferroelectricity also exists in similarly sandwiched bilayer and trilayer graphene, yet the polarization is slightly decreased with odd-even parity. Ab initio calculations suggest that the ferroelectricity is associated with a unique switchable co-sliding motion between graphene and adjacent boron nitride layer, in contrast to existing conventional vdW sliding ferroelectrics. As such, the ferroelectricity can sustain up to 325 K and remains intact after 50000 switching cycles in ~300000 s duration at 300 K. These results open a new opportunity to develop ultrathin memory devices based on rhombohedral-like heterostructures.

Date: 2025
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DOI: 10.1038/s41467-025-56065-9

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