Step-necking growth of silicon nanowire channels for high performance field effect transistors

Lei Wu, Zhiyan Hu, Lei Liang, Ruijin Hu (), Junzhuan Wang () and Linwei Yu ()
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Lei Wu: Nanjing University
Zhiyan Hu: Nanjing University
Lei Liang: Nanjing University
Ruijin Hu: Yangzhou University
Junzhuan Wang: Nanjing University
Linwei Yu: Nanjing University

Nature Communications, 2025, vol. 16, issue 1, 1-9

Abstract: Abstract Ultrathin silicon nanowires (diameter 8 × 107 and a sharper subthreshold swing of 70 mV/dec, thanks to a stronger gating effect in the middle channel and markedly improved electric contacts at the thicker source/drain ends. These findings mark the pioneering experimental demonstration of catalytic growth acting as a deterministic fabrication method for precisely crafting engineered FET channels, ideally fitting the requirements of high-performance large-area displays and sensors.

Date: 2025
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DOI: 10.1038/s41467-025-56376-x

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