Controllable synthesis of nonlayered high-κ Mn3O4 single-crystal thin films for 2D electronics

Jiashuai Yuan, Chuanyong Jian, Zhihui Shang, Yu Yao, Bicheng Wang, Yixiang Li, Rutao Wang, Zhipeng Fu, Meng Li, Wenting Hong, Xu He, Qian Cai and Wei Liu ()
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Jiashuai Yuan: Chinese Academy of Sciences
Chuanyong Jian: Chinese Academy of Sciences
Zhihui Shang: Qilu University of Technology (Shandong Academy of Sciences)
Yu Yao: Chinese Academy of Sciences
Bicheng Wang: Chinese Academy of Sciences
Yixiang Li: Chinese Academy of Sciences
Rutao Wang: Qilu University of Technology (Shandong Academy of Sciences)
Zhipeng Fu: Chinese Academy of Sciences
Meng Li: Chinese Academy of Sciences
Wenting Hong: Chinese Academy of Sciences
Xu He: Chinese Academy of Sciences
Qian Cai: Chinese Academy of Sciences
Wei Liu: Chinese Academy of Sciences

Nature Communications, 2025, vol. 16, issue 1, 1-9

Abstract: Abstract Two-dimensional (2D) materials have been identified as promising candidates for future electronic devices. However, high dielectric constant (κ) materials, which can be integrated with 2D semiconductors, are still rare. Here, we report a hydrate-assisted thinning chemical vapor deposition (CVD) technique to grow manganese oxide (Mn3O4) single crystal nanosheets, enabled by a strategy to minimize the substrate lattice mismatch and control the growth kinetics. The material demonstrated a dielectric constant up to 135, an equivalent oxide thickness (EOT) as low as 0.8 nm, and a breakdown field strength (Ebd) exceeding 10 MV/cm. MoS2 field-effect transistors (FETs) integrated with Mn3O4 thin films through mechanical stacking method operate under low voltages (

Date: 2025
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DOI: 10.1038/s41467-025-56386-9

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