Ultralow trap density FAPbBr3 perovskite films for efficient light-emitting diodes and amplified spontaneous emission

Desui Chen, Aleksandr A. Sergeev, Nan Zhang, Lingyi Ke, Ye Wu, Bing Tang, Chun Ki Tao, Haochen Liu, Guangruixing Zou, Zhaohua Zhu, Yidan An, Yun Li, Arsenii Portniagin, Kseniia A. Sergeeva, Kam Sing Wong, Hin-Lap Yip () and Andrey L. Rogach ()
Additional contact information
Desui Chen: City University of Hong Kong, Kowloon
Aleksandr A. Sergeev: The Hong Kong University of Science and Technology, Kowloon
Nan Zhang: City University of Hong Kong, Kowloon
Lingyi Ke: City University of Hong Kong, Kowloon
Ye Wu: City University of Hong Kong, Kowloon
Bing Tang: City University of Hong Kong, Kowloon
Chun Ki Tao: The Hong Kong University of Science and Technology, Kowloon
Haochen Liu: City University of Hong Kong, Kowloon
Guangruixing Zou: City University of Hong Kong, Kowloon
Zhaohua Zhu: City University of Hong Kong, Kowloon
Yidan An: City University of Hong Kong, Kowloon
Yun Li: City University of Hong Kong, Kowloon
Arsenii Portniagin: City University of Hong Kong, Kowloon
Kseniia A. Sergeeva: City University of Hong Kong, Kowloon
Kam Sing Wong: The Hong Kong University of Science and Technology, Kowloon
Hin-Lap Yip: City University of Hong Kong, Kowloon
Andrey L. Rogach: City University of Hong Kong, Kowloon

Nature Communications, 2025, vol. 16, issue 1, 1-9

Abstract: Abstract Solution-processed metal halide perovskites are widely studied for their potential in high-efficiency light-emitting diodes, yet they are facing several challenges like insufficient brightness, short operational lifetimes, and reduced power conversion efficiency under practical operation conditions. Here, we develop an interfacial amidation reaction on sacrificial ZnO substrates to produce perovskite films with low trap density (1.2 × 1010 cm−3), and implement a device structure featuring a mono-molecular hole-injection layer and an all-inorganic bi-layered electron-injection layer. This design leads to green perovskite light-emitting diodes with a brightness of ~ 312,000 cd m−2, a half-lifetime of 350 h at 1000 cd m−2, and a power conversion efficiency of 15.6% at a current density of 300 mA cm−2. Furthermore, the perovskite films show a low amplified spontaneous emission threshold of 13 μJ cm−2. Thus, our approach significantly advances the performance of green perovskite light-emitting diodes and opens up an avenue toward perovskite-based electrically pumped lasers.

Date: 2025
References: Add references at CitEc
Citations:

Downloads: (external link)
https://www.nature.com/articles/s41467-025-56557-8 Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-56557-8

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/s41467-025-56557-8

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().