Advancing Ag2Se thin-film thermoelectrics via selenization-driven anisotropy control

Tianyi Cao, Xiao-Lei Shi (), Boxuan Hu, Qishuo Yang, Wan-Yu Lyu, Shuai Sun, Liang-Cao Yin, Qing-Yi Liu, Wenyi Chen, Xiaodong Wang, Siqi Liu, Meng Li, Wei-Di Liu, Tuquabo Tesfamichael, Qingfeng Liu, Jennifer MacLeod and Zhi-Gang Chen ()
Additional contact information
Tianyi Cao: Queensland University of Technology
Xiao-Lei Shi: Queensland University of Technology
Boxuan Hu: Queensland University of Technology
Qishuo Yang: Queensland University of Technology
Wan-Yu Lyu: Queensland University of Technology
Shuai Sun: Queensland University of Technology
Liang-Cao Yin: Nanjing Tech University
Qing-Yi Liu: Queensland University of Technology
Wenyi Chen: The University of Queensland
Xiaodong Wang: Queensland University of Technology
Siqi Liu: Queensland University of Technology
Meng Li: Queensland University of Technology
Wei-Di Liu: Queensland University of Technology
Tuquabo Tesfamichael: Queensland University of Technology
Qingfeng Liu: Nanjing Tech University
Jennifer MacLeod: Queensland University of Technology
Zhi-Gang Chen: Queensland University of Technology

Nature Communications, 2025, vol. 16, issue 1, 1-13

Abstract: Abstract The debate over the optimal orientation of Ag2Se thin films and its influence on thermoelectric performance remains ongoing. Here, we report a wet-chemical selenization-based anisotropy optimization technique to control the in-plane orientation of the Ag2Se thin film, steering it away from (002) nearly parallel planes that hinder charge carrier mobility. This approach enables us to achieve an impressive power factor of 30.8 μW cm−1 K−2 at 343 K. The as-fabricated Ag2Se thin film demonstrates remarkable durability, retaining over 90% of its power factor after six months of air exposure, and outstanding flexibility, with performance variation staying within 5% after 2000 bending cycles at a 5 mm radius. These attributes are attributed to the controlled film thickness, crystallinity, and strong adhesion to the polyimide substrate. Additionally, the as-assembled slotted thermoelectric device delivers an output power of 0.58 μW and a competitive power density of 807 μW cm−2 at a temperature difference of 20 K, alongside a high normalized power density of 1.8 μW cm−2 K−2, highlighting its potential for practical application. This study provides valuable insights into the design of high-performance, highly flexible thermoelectric thin films for real-world applications.

Date: 2025
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DOI: 10.1038/s41467-025-56671-7

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