Transferrable, wet-chemistry-derived high-k amorphous metal oxide dielectrics for two-dimensional electronic devices

Zhixin Yao, Huifeng Tian, U. Sasaki, Huacong Sun, Jingyi Hu, Guodong Xue, Ye Seul Jung, Ruijie Li, Zhenjiang Li, PeiChi Liao, Yihan Wang, Lina Yang Zhang, Ge Yin, Xuanyu Zhang, Yijie Luo, Wenxi Li, Yong Soo Cho, Peizhi Liu, Kaihui Liu, Yanfeng Zhang, Lifen Wang, Junjie Guo () and Lei Liu ()
Additional contact information
Zhixin Yao: Taiyuan University of Technology
Huifeng Tian: Peking University
U. Sasaki: Peking University
Huacong Sun: Chinese Academy of Sciences
Jingyi Hu: Peking University
Guodong Xue: Peking University
Ye Seul Jung: Yonsei University
Ruijie Li: Peking University
Zhenjiang Li: Peking University
PeiChi Liao: Peking University
Yihan Wang: Peking University
Lina Yang Zhang: Peking University
Ge Yin: Peking University
Xuanyu Zhang: Peking University
Yijie Luo: Peking University
Wenxi Li: Peking University
Yong Soo Cho: Yonsei University
Peizhi Liu: Taiyuan University of Technology
Kaihui Liu: Peking University
Yanfeng Zhang: Peking University
Lifen Wang: Chinese Academy of Sciences
Junjie Guo: Taiyuan University of Technology
Lei Liu: Peking University

Nature Communications, 2025, vol. 16, issue 1, 1-11

Abstract: Abstract Two-dimensional (2D) materials hold transformative potential for next-generation electronics. The integration of high dielectric constant (k) dielectrics onto 2D semiconductors, while maintaining their pristine properties by low-defect-density interfaces, has proven challenging and become one performance bottleneck of their practical implementation. Here, we report a wet-chemistry-based method to fabricate amorphous, transferable high-k (42.9) copper calcium titanate (CCTO) thin films as high-quality, dual-function dielectrics for 2D electronic devices. The chelation-based Pechini approach guarantees uniformity in this perovskite-type complex oxide, while the transferrable feature allows its harmless integration to 2D semiconductors interfacing with a nanogap. The CCTO-gated MoS2 devices exhibit a subthreshold swing down to 67 mV dec−1 and an ultra-small hysteresis of ~ 1 mV/(MV cm−1). Moreover, leveraging its visible-light active characteristics, we implement an electrically-manipulated, optically-activated nonvolatile floating gate in CCTO, enabling the reconfigurable execution of 9 basic Boolean logic in-sensor operations within a single field-effect device architecture. This advancement paves the way for the development of multifunctional, low-power 2D electronic systems by incorporating multifunctional conventional complex oxides.

Date: 2025
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DOI: 10.1038/s41467-025-56815-9

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