Towards the quantized anomalous Hall effect in AlOx-capped MnBi2Te4

Yongqian Wang, Bohan Fu, Yongchao Wang, Zichen Lian, Shuai Yang, Yaoxin Li, Liangcai Xu, Zhiting Gao, Xiaotian Yang, Wenbo Wang, Wanjun Jiang, Jinsong Zhang, Yayu Wang and Chang Liu ()
Additional contact information
Yongqian Wang: Renmin University of China
Bohan Fu: Renmin University of China
Yongchao Wang: Tsinghua University
Zichen Lian: Tsinghua University
Shuai Yang: Renmin University of China
Yaoxin Li: Tsinghua University
Liangcai Xu: Tsinghua University
Zhiting Gao: Beijing Academy of Quantum Information Sciences
Xiaotian Yang: ShanghaiTech University
Wenbo Wang: ShanghaiTech University
Wanjun Jiang: Tsinghua University
Jinsong Zhang: Tsinghua University
Yayu Wang: Tsinghua University
Chang Liu: Renmin University of China

Nature Communications, 2025, vol. 16, issue 1, 1-8

Abstract: Abstract The quantum anomalous Hall effect in layered antiferromagnet MnBi2Te4 harbors a rich interplay between magnetism and topology, holding a significant promise for low-power electronic devices and topological antiferromagnetic spintronics. In recent years, MnBi2Te4 has garnered considerable attention as the only known material to exhibit the antiferromagnetic quantum anomalous Hall effect. However, this field faces significant challenges as the quantization at zero magnetic field depending critically on fabricating high-quality devices. In this article, we introduce a straightforward yet effective method to mitigate the detrimental effect of the standard fabrication on MnBi2Te4 by depositing an AlOx layer on the surface before fabrication. Optical contrast and magnetotransport measurements on over 50 MnBi2Te4 demonstrate that AlOx can effectively preserve the pristine states of the devices. Surprisingly, we find this simple method can significantly enhance the anomalous Hall effect towards quantization, which resolves a longstanding challenge in the field of MnBi2Te4. Scaling relation analysis further reveals the intrinsic mechanism of anomalous Hall effect dominated by Berry curvature at various magnetic configuration. By tuning the gate voltage, we uncover a gate independent magnetism in odd-layer MnBi2Te4 devices. Our experiments not only pave the way for the fabrication of high-quality dissipationless transport devices, but also advance the investigation of exotic topological quantum phenomena in 2D materials.

Date: 2025
References: View references in EconPapers View complete reference list from CitEc
Citations:

Downloads: (external link)
https://www.nature.com/articles/s41467-025-57039-7 Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-57039-7

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/s41467-025-57039-7

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().