Low-temperature pressure-assisted liquid-metal printing for β-Ga2O3 thin-film transistors

Chi-Hsin Huang, Ruei-Hong Cyu, Yu-Lun Chueh and Kenji Nomura ()
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Chi-Hsin Huang: University of California San Diego
Ruei-Hong Cyu: National Tsing Hua University
Yu-Lun Chueh: National Tsing Hua University
Kenji Nomura: University of California San Diego

Nature Communications, 2025, vol. 16, issue 1, 1-13

Abstract: Abstract Developing a low-temperature and cost-effective manufacturing process for energy-efficient and high-performance oxide-thin-film transistors (TFTs) is a crucial step toward advancing next-generation device applications such as wearable and flexible electronics. Among several methods, a liquid-metal printing technique is considered a promising, cost-effective oxide semiconductor process due to its inherent advantages, such as vacuum-free, low-thermal budget, high throughput, and scalability. In this study, we have developed a pressure-assisted liquid-metal printing technique enabling the low-temperature synthesis of polycrystalline wide bandgap n-channel oxide-TFTs. The n-channel oxide TFTs based on ~3 nm-thick β-Ga2O3 channels exhibited good TFT switching properties with a threshold voltage of ~3.8 V, a saturation mobility of ~11.7 cm2 V−1 s−1, an on/off-current ratio of ~109, and a subthreshold slope of ~163 mV/decade. We also observed p-channel operation in the off-stoichiometric GaOx channels fabricated at high-pressure conditions. Toward oxide-based circuit applications, we developed high-performance oxide-TFT-based inverters. While our approach can promote the advancement of low-temperature manufacturing for oxide TFT technology, further work will be necessary to confirm the role of the applied pressure in the β-Ga2O3 crystallization process.

Date: 2025
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DOI: 10.1038/s41467-025-57200-2

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