Wafer-scale platform for on-chip 3D radio frequency lumped passive components using metal self-rolled-up membrane technique

Zhikun Zhou, Zihan Zhang, Hanlin Zhang, Xianchao Wei, Wei He, Quhuan Shen, Xiuwen Bi, Tao Yuan, Xiaochen Chen, Lei Sang and Wen Huang ()
Additional contact information
Zhikun Zhou: Hefei University of Technology
Zihan Zhang: Hefei University of Technology
Hanlin Zhang: Hefei University of Technology
Xianchao Wei: Hefei University of Technology
Wei He: Hefei University of Technology
Quhuan Shen: Ltd
Xiuwen Bi: Ltd
Tao Yuan: Shenzhen University
Xiaochen Chen: China Academy of Information and Communications Technology
Lei Sang: Hefei University of Technology
Wen Huang: Hefei University of Technology

Nature Communications, 2025, vol. 16, issue 1, 1-11

Abstract: Abstract A wafer-scale metal self-rolled-up membrane platform has been proposed for the design and fabrication of radio-frequency on-chip lumped passive components, which is demonstrated on a commercial 4-inch sapphire batch fabrication line. Compared to the traditional methodology including planar or SiNx based self-rolled-up membrane processing technologies to obtain the most basic passive lumped components, such as inductors and capacitors on the chip, this platform enables more compact three-dimensional construction of the component device structure with higher electrical performance. For demonstration, batches of wafer-scale RF inductors and capacitors are fabricated through precise design based on electromagnetic analysis. Measurement results show that radio-frequency inductor samples obtain inductance of 0.6 nH~3.4 nH and a maximum quality factor of 3.1 ~ 7.3 with the largest inductance density of 2.26 $$\,{{{\rm{\mu }}}}{{{\rm{H}}}}/{{{{\rm{mm}}}}}^{2}$$ μ H / mm 2 , and a typical RF capacitor sample show capacitance of 0.5 pF with the largest capacitance density of 1528.4 $${{{\rm{pF}}}}/{{{{\rm{mm}}}}}^{2}$$ pF / mm 2 . After post electroplating, coper layer thickness of a 1.1 nH inductor is increased to be ~ 2.7 μm from 120 nm with the inner diameter of 80 μm, and the maximum quality factor is significantly increased to 18 @ 1.4 GHz. Standalone inductors can be successfully cut off from a 4-inch sapphire wafer by using laser modification cutting.

Date: 2025
References: Add references at CitEc
Citations:

Downloads: (external link)
https://www.nature.com/articles/s41467-025-57769-8 Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-57769-8

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/s41467-025-57769-8

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().