2D edge-seeded heteroepitaxy of ultrathin high-κ dielectric CaNb2O6 for 2D field-effect transistors

Xiulian Fan, Jiali Yi, Bin Deng, Cong Zhou, Zejuan Zhang, Jia Yu, Weihan Li, Cheng Li, Guangcheng Wu, Xilong Zhou, Tulai Sun, Yihan Zhu, Jian Zhou, Juan Xia, Zenghui Wang, Keji Lai, Zheng Peng, Dong Li (), Anlian Pan () and Yu Zhou ()
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Xiulian Fan: Central South University
Jiali Yi: Hunan University
Bin Deng: Zhejiang University of Technology
Cong Zhou: Xi’an Jiaotong University
Zejuan Zhang: University of Electronic Science and Technology of China
Jia Yu: University of Texas at Austin
Weihan Li: Western University
Cheng Li: Central South University
Guangcheng Wu: Hunan University
Xilong Zhou: Central South University
Tulai Sun: Zhejiang University of Technology
Yihan Zhu: Zhejiang University of Technology
Jian Zhou: Xi’an Jiaotong University
Juan Xia: University of Electronic Science and Technology of China
Zenghui Wang: University of Electronic Science and Technology of China
Keji Lai: University of Texas at Austin
Zheng Peng: Central South University
Dong Li: Hunan University
Anlian Pan: Hunan University
Yu Zhou: Central South University

Nature Communications, 2025, vol. 16, issue 1, 1-12

Abstract: Abstract The experimental realization of single-crystalline high-κ dielectrics beyond two-dimensional (2D) layered materials is highly desirable for nanoscale field-effect transistors (FETs). However, the scalable synthesis of 2D nonlayered high-κ insulators is currently limited by uncontrolled isotropic three-dimensional growth, hampering the achievement of simultaneous high dielectric constants and low trap densities for small film thicknesses. Herein, we show a 2D edge-seeded heteroepitaxial strategy to synthesize ultrathin nonlayered 2D CaNb2O6 nanosheets by chemical vapor deposition, exhibiting high-crystalline quality, thickness-independent dielectric constant (~ 16) and breakdown field strength up to ~ 12 MV cm−1. The MoS2/CaNb2O6 FETs exhibit an on/off ratio of over ~ 107, a subthreshold swing down to 61 mV/dec and a negligible hysteresis. This work suggests a universal 2D edge-seeded heteroepitaxy and slow kinetic strategy for the scalable growth of 2D nonlayered dielectric and demonstrates 2D CaNb2O6 nanosheets as promising dielectrics for facilitating 2D electronic applications.

Date: 2025
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DOI: 10.1038/s41467-025-57773-y

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