Ultrahigh dielectric permittivity in Hf0.5Zr0.5O2 thin-film capacitors

Wen Di Zhang, Zi Zheng Song, Shu Qi Tang, Jin Chen Wei, Yan Cheng, Bing Li, Shi You Chen (), Zi Bin Chen () and An Quan Jiang ()
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Wen Di Zhang: Fudan University
Zi Zheng Song: The Hong Kong Polytechnic University
Shu Qi Tang: Fudan University
Jin Chen Wei: Fudan University
Yan Cheng: East China Normal University
Bing Li: ShanghaiTech University
Shi You Chen: Fudan University
Zi Bin Chen: The Hong Kong Polytechnic University
An Quan Jiang: Fudan University

Nature Communications, 2025, vol. 16, issue 1, 1-10

Abstract: Abstract The ever-shrinking electrostatic capacitor, which is capable of storing substantial quantities of electrical charge, has found widespread applications in high-storage-density dynamic random access memory and energy-efficient complementary metal-oxide-semiconductor devices. Despite the high energy storage densities (133–152 J/cm3) and efficiencies (75–90%) that have been realized using relaxor ferroelectric thick films, low-permittivity interfacial layers in the ultrathin films have caused the overall permittivity to be one to two orders of magnitude lower than expected. However, innovative use of complementary metal-oxide-semiconductor-compatible HfO2-based materials with high permittivities (~52) could enable integration of these capacitors into few-nanometre-scale devices. This study reports an ultrahigh dielectric permittivity of 921, stored charge density of 349 μC/cm2, and energy density of 584 J/cm3 with nearly 100% efficiency within near-edge plasma-treated Hf0.5Zr0.5O2 thin-film capacitors when the Hf-based material’s ferroelectricity disappears suddenly after polarization fatigue. The ultrahigh dielectric permittivity originates from a distorted orthorhombic phase with ordered oxygen vacancies that enables high-density integration of extremely scaled logic and memory devices for low-voltage applications.

Date: 2025
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DOI: 10.1038/s41467-025-57963-8

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