Large-scale alkali-assisted growth of monolayer and bilayer WSe2 with a low defect density

Sui-An Chou, Chen Chang, Bo-Hong Wu, Chih-Piao Chuu, Pai-Chia Kuo, Liang-Hsuan Pan, Kai-Chun Huang, Man-Hong Lai, Yi-Feng Chen, Che-Lun Lee, Hao-Yu Chen, Jessie Shiue, Yu-Ming Chang, Ming-Yang Li, Ya-Ping Chiu, Chun-Wei Chen () and Po-Hsun Ho ()
Additional contact information
Sui-An Chou: Taiwan Semiconductor Manufacturing Company
Chen Chang: National Taiwan University
Bo-Hong Wu: National Taiwan University
Chih-Piao Chuu: Taiwan Semiconductor Manufacturing Company
Pai-Chia Kuo: Academia Sinica
Liang-Hsuan Pan: National Taiwan University
Kai-Chun Huang: National Taiwan University
Man-Hong Lai: National Taiwan University
Yi-Feng Chen: National Taiwan University
Che-Lun Lee: National Taiwan University
Hao-Yu Chen: National Taiwan University
Jessie Shiue: Academia Sinica
Yu-Ming Chang: National Taiwan University
Ming-Yang Li: Taiwan Semiconductor Manufacturing Company
Ya-Ping Chiu: National Taiwan University
Chun-Wei Chen: National Taiwan University
Po-Hsun Ho: Taiwan Semiconductor Manufacturing Company

Nature Communications, 2025, vol. 16, issue 1, 1-8

Abstract: Abstract The development of p-type WSe2 transistors has lagged behind n-type MoS2 because of challenges in growing high-quality, large-area WSe2 films. This study employs an alkali-assisted CVD (AACVD) method by using KOH to enhance nucleation on sapphire substrates, effectively promoting monolayer growth on c-plane sapphire and enabling controlled bilayer seeding on miscut surfaces with artificial steps. With AACVD, we achieve 2-inch monolayer and centimeter-scale bilayer WSe2 films with defect densities as low as 1.6 × 1012 cm−2 (monolayer) and 1.8 × 1012 cm−2 (bilayer), comparable to exfoliated WSe2. Bilayer WSe2 transistors exhibit hole/electron mobilities of 119/34 cm²/Vs, while monolayers achieve 105/22 cm²/Vs with suitable metal contacts. Additionally, bilayer WSe2 demonstrates lower contact resistance for both n-type and p-type transistors, making it highly promising for future high-performance electronic applications.

Date: 2025
References: Add references at CitEc
Citations:

Downloads: (external link)
https://www.nature.com/articles/s41467-025-57986-1 Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-57986-1

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/s41467-025-57986-1

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().