Efficient light upconversion via resonant exciton-exciton annihilation of dark excitons in few-layer transition metal dichalcogenides

Yi-Hsun Chen (), Ping-Yuan Lo, Kyle W. Boschen, Chih-En Hsu, Yung-Ning Hsu, Luke N. Holtzman, Guan-Hao Peng, Chun-Jui Huang, Madisen Holbrook, Wei-Hua Wang, Katayun Barmak, James Hone, Pawel Hawrylak, Hung-Chung Hsueh, Jeffrey A. Davis, Shun-Jen Cheng (), Michael S. Fuhrer and Shao-Yu Chen ()
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Yi-Hsun Chen: Monash University
Ping-Yuan Lo: National Yang Ming Chiao Tung University
Kyle W. Boschen: Monash University
Chih-En Hsu: Tamkang University
Yung-Ning Hsu: Tamkang University
Luke N. Holtzman: Columbia University
Guan-Hao Peng: National Yang Ming Chiao Tung University
Chun-Jui Huang: National Yang Ming Chiao Tung University
Madisen Holbrook: Columbia University
Wei-Hua Wang: Academia Sinica
Katayun Barmak: Columbia University
James Hone: Columbia University
Pawel Hawrylak: University of Ottawa
Hung-Chung Hsueh: Tamkang University
Jeffrey A. Davis: Monash University
Shun-Jen Cheng: National Yang Ming Chiao Tung University
Michael S. Fuhrer: Monash University
Shao-Yu Chen: Monash University

Nature Communications, 2025, vol. 16, issue 1, 1-11

Abstract: Abstract Materials capable of light upconversion—transforming low-energy photons into higher-energy ones—are pivotal in advancing optoelectronics, energy solutions, and photocatalysis. However, the discovery in various materials pays little attention on few-layer transition metal dichalcogenides, primarily due to their indirect bandgaps and weaker light-matter interactions. Here, we report a pronounced light upconversion in few-layer transition metal dichalcogenides through upconversion photoluminescence spectroscopy. Our joint theory-experiment study attributes the upconversion photoluminescence to a resonant exciton-exciton annihilation involving a pair of dark excitons with opposite momenta, followed by the spontaneous emission of upconverted bright excitons, which can have a high upconversion efficiency. Additionally, the upconversion photoluminescence is generic in MoS2, MoSe2, WS2, and WSe2, showing a high tuneability from green to ultraviolet light (2.34–3.1 eV). The findings pave the way for further exploration of light upconversion regarding fundamental properties and device applications in two-dimensional semiconductors.

Date: 2025
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DOI: 10.1038/s41467-025-57991-4

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