Coupling furfural oxidation for bias-free hydrogen production using crystalline silicon photoelectrodes

Myohwa Ko, Myounghyun Lee, Taehyeon Kim, Wonjoo Jin, Wonsik Jang, Seon Woo Hwang, Haneul Kim, Ja Hun Kwak, Seungho Cho (), Kwanyong Seo () and Ji-Wook Jang ()
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Myohwa Ko: Ulsan National Institute of Science and Technology (UNIST)
Myounghyun Lee: Ulsan National Institute of Science and Technology (UNIST)
Taehyeon Kim: Ulsan National Institute of Science and Technology (UNIST)
Wonjoo Jin: Ulsan National Institute of Science and Technology (UNIST)
Wonsik Jang: Ulsan National Institute of Science and Technology (UNIST)
Seon Woo Hwang: Ulsan National Institute of Science and Technology (UNIST)
Haneul Kim: Ulsan National Institute of Science and Technology (UNIST)
Ja Hun Kwak: Ulsan National Institute of Science and Technology (UNIST)
Seungho Cho: Ulsan National Institute of Science and Technology (UNIST)
Kwanyong Seo: Ulsan National Institute of Science and Technology (UNIST)
Ji-Wook Jang: Ulsan National Institute of Science and Technology (UNIST)

Nature Communications, 2025, vol. 16, issue 1, 1-10

Abstract: Abstract To commercialize the technology of photoelectrochemical hydrogen production, it is essential to surpass the US. Department of Energy target of 0.36 mmol h−1 cm−2 for 1-sun hydrogen production rate. In this study, we utilize crystalline silicon, which can exhibit the highest photocurrent density (43.37 mA cm−2), as the photoelectrode material. However, achieving bias-free water splitting (>1.6 V) remains challenging due to the intrinsic low photovoltage of crystalline silicon (0.6 V). To address this limitation, we replace water oxidation with low-potential furfural oxidation, enabling not only bias-free hydrogen production but also dual hydrogen production at both the cathodic and anodic sides. This approach results in a record 1-sun hydrogen production rate of 1.40 mmol h−1 cm−2, exceeding the Department of Energy target by more than fourfold.

Date: 2025
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DOI: 10.1038/s41467-025-58000-4

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