A mid-infrared Brillouin laser using ultra-high-Q on-chip resonators

Kiyoung Ko, Daewon Suk, Dohyeong Kim, Soobong Park, Betul Sen, Dae-Gon Kim, Yingying Wang, Shixun Dai, Xunsi Wang, Rongping Wang, Byung Jae Chun, Kwang-Hoon Ko, Peter T. Rakich, Duk-Yong Choi () and Hansuek Lee ()
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Kiyoung Ko: Korea Advanced Institute of Science and Technology
Daewon Suk: Korea Advanced Institute of Science and Technology
Dohyeong Kim: Korea Advanced Institute of Science and Technology
Soobong Park: Korea Advanced Institute of Science and Technology
Betul Sen: Yale University
Dae-Gon Kim: Korea Advanced Institute of Science and Technology
Yingying Wang: Ningbo University
Shixun Dai: Ningbo University
Xunsi Wang: Ningbo University
Rongping Wang: Ningbo University
Byung Jae Chun: Korea Atomic Energy Research Institute
Kwang-Hoon Ko: Korea Atomic Energy Research Institute
Peter T. Rakich: Yale University
Duk-Yong Choi: Australian National University
Hansuek Lee: Korea Advanced Institute of Science and Technology

Nature Communications, 2025, vol. 16, issue 1, 1-9

Abstract: Abstract Ultra-high-Q optical resonators have facilitated advancements in on-chip photonics by harnessing nonlinear functionalities. While these breakthroughs, primarily focused on the near-infrared region, have extended interest to longer wavelengths holding importance for molecule science, the absence of ultra-high-Q resonators in this region remains a significant challenge. Here, we have developed on-chip microresonators with a remarkable Q-factor of 38 million at 3.86 μm wavelength, surpassing previous records by over 30 times. Employing innovative fabrication techniques, including spontaneous formation of light-guiding geometries with internal multilayer structures during material deposition, major loss factors, such as airborne-chemical absorption, were investigated and addressed. This allowed us to access the fundamental loss performance demonstrated by chalcogenide glass fibers. Leveraging this resonator, we demonstrated an on-chip Brillouin lasing in the mid-infrared with a 91.9 μW threshold power and an 83.5 Hz Schawlow-Townes linewidth. Our results showcase the effective integration of cavity-enhanced optical nonlinearities into on-chip mid-infrared photonics.

Date: 2025
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DOI: 10.1038/s41467-025-58010-2

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