Polarity modulation in compositionally tunable Bi2O2Se thin films

Yong-Jyun Wang, Jian-Wei Zhang, Jianchu Chen, Haonan Wang, Shiuan Wu, Chang-Yu Lo, Jhe-Ting Hong, Cheng-Yang Syu, Li-Syuan Hao, I-Sung Chen, Yuan-Chih Chang, Zhenzhong Yang, Rong Huang (), Chun-Liang Lin, Po-Wen Chiu, Yu-Lun Chueh, Yi-Cheng Chen, Chao-Hui Yeh () and Ying-Hao Chu ()
Additional contact information
Yong-Jyun Wang: National Tsing Hua University
Jian-Wei Zhang: East China Normal University
Jianchu Chen: East China Normal University
Haonan Wang: East China Normal University
Shiuan Wu: National Tsing Hua University
Chang-Yu Lo: National Yang Ming Chiao Tung University
Jhe-Ting Hong: National Tsing Hua University
Cheng-Yang Syu: National Tsing Hua University
Li-Syuan Hao: National Tsing Hua University
I-Sung Chen: National Tsing Hua University
Yuan-Chih Chang: National Tsing Hua University
Zhenzhong Yang: East China Normal University
Rong Huang: East China Normal University
Chun-Liang Lin: National Yang Ming Chiao Tung University
Po-Wen Chiu: National Tsing Hua University
Yu-Lun Chueh: National Tsing Hua University
Yi-Cheng Chen: National Tsing Hua University
Chao-Hui Yeh: National Tsing Hua University
Ying-Hao Chu: National Tsing Hua University

Nature Communications, 2025, vol. 16, issue 1, 1-9

Abstract: Abstract Two-dimensional (2D) materials have emerged as one of most promising candidates to meet the demands of beyond-silicon technology. Among 2D semiconductors, Bi2O2Se (BOSe) stands out as a channel material for advanced electronic applications, due to its high electron mobility and the formation of a native high-k dielectric layer. However, the fabrication of p-type 2D BOSe transistors remains challenging. Here, we report an area-selective doping method at low temperatures (~600 K, compatible with back-end-of-line processes) of pulsed laser deposited BOSe thin films, enabling the modulation of their carrier polarity via the introduction of Zn2+ substitutional dopants. Taking advantage of this doping strategy, we demonstrate the fabrication of a 2D vertical p-n homojunction with an on/off ratio in photoresponse of ~106 and planar transistors based on p-doped BOSe homojunctions. Our results help promoting the application of this material system towards the development of the next-generation electronics.

Date: 2025
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DOI: 10.1038/s41467-025-58198-3

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