Giant magnetoresistance induced by spin-dependent orbital coupling in Fe3GeTe2/graphene heterostructures

Shiming Huang, Lianying Zhu, Yongxin Zhao, Kenji Watanabe, Takashi Taniguchi, Jie Xiao, Le Wang, Jiawei Mei, Huolin Huang, Feng Zhang (), Maoyuan Wang (), Deyi Fu () and Rong Zhang
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Shiming Huang: Xiamen University
Lianying Zhu: Xiamen University
Yongxin Zhao: Xiamen University
Kenji Watanabe: National Institute for Materials Science
Takashi Taniguchi: National Institute for Materials Science
Jie Xiao: Southern University of Science and Technology
Le Wang: Southern University of Science and Technology
Jiawei Mei: Southern University of Science and Technology
Huolin Huang: Dalian University of Technology
Feng Zhang: Xiamen University
Maoyuan Wang: Xiamen University
Deyi Fu: Xiamen University
Rong Zhang: Xiamen University

Nature Communications, 2025, vol. 16, issue 1, 1-6

Abstract: Abstract Information technology has a great demand for magnetoresistance (MR) sensors with high sensitivity and wide-temperature-range operation. It is well known that space charge inhomogeneity in graphene (Gr) leads to finite MR in its pristine form, and can be enhanced by increasing the degree of spatial disorder. However, the enhanced MR usually diminishes drastically as the temperature decreases. Here, by stacking a van der Waals ferromagnet Fe3GeTe2 (FGT) on top of graphene to form an FGT/Gr heterostructure, we demonstrate a positive MR of up to ~9400% under a magnetic field of 9 T at room temperature (RT), an order of magnitude larger MR compared to pure graphene. More strikingly, the giant MR of the FGT/Gr heterostructure sustains over a wide temperature range from RT down to 4 K. Both control experiments and DFT calculations show that the enhanced MR originates from spin-dependent orbital coupling between FGT and graphene, which is temperature insensitive. Our results open a new route for realizing high-sensitivity and wide-temperature-range MR sensors.

Date: 2025
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DOI: 10.1038/s41467-025-58224-4

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