Matrix plainification leads to high thermoelectric performance in plastic Cu2Se/SnSe composites

Pan Ying, Qingyang Jian, Yaru Gong, Tong Song, Yuxuan Yang, Yang Geng, Junquan Huang, Rongxin Sun, Chen Chen, Tao Shen, Yanan Li, Wei Dou, Congmin Liang, Yuqi Liu, Deshang Xiang, Tao Feng, Xiaoyu Fei, Yongsheng Zhang, Kun Song, Yang Zhang, Haijun Wu () and Guodong Tang ()
Additional contact information
Pan Ying: Nanjing University of Science and Technology
Qingyang Jian: Nanjing University of Science and Technology
Yaru Gong: Nanjing University of Science and Technology
Tong Song: Xi’an Jiaotong University
Yuxuan Yang: Xi’an Jiaotong University
Yang Geng: Nanjing University of Science and Technology
Junquan Huang: Yanshan University
Rongxin Sun: Yanshan University
Chen Chen: Yanshan University
Tao Shen: Yanshan University
Yanan Li: Nanjing University of Science and Technology
Wei Dou: Nanjing University of Science and Technology
Congmin Liang: Nanjing University of Science and Technology
Yuqi Liu: Nanjing University of Science and Technology
Deshang Xiang: Nanjing University of Science and Technology
Tao Feng: Nanjing University of Science and Technology
Xiaoyu Fei: Qufu Normal University
Yongsheng Zhang: Qufu Normal University
Kun Song: Nanjing Tech University
Yang Zhang: Xi’an Jiaotong University
Haijun Wu: Xi’an Jiaotong University
Guodong Tang: Nanjing University of Science and Technology

Nature Communications, 2025, vol. 16, issue 1, 1-12

Abstract: Abstract Thermoelectric technology exhibits significant potential for power generation and electronic cooling. In this study, we report the achievement of exceptional thermoelectric performance and high plasticity in stable Cu2Se/SnSe composites. A novel matrix plainification strategy was employed to eliminate lattice vacancies within the Cu2Se matrix of the Cu2Se/SnSe composites, resulting in a marked improvement in carrier mobility and power factor. The presence of quasi-coherent interfaces induces phonon scattering, reducing lattice thermal conductivity without compromising carrier mobility. Consequently, a high figure of merit (ZT) of 3.3 was attained in the Cu2Se/5 wt.% Sn0.96Pb0.01Zn0.03Se composite. Additionally, the presence of high-density nanotwins imparts remarkable plasticity to the composite, yielding a compressive strain of 12%. The secondary phase contributes to the stability of the composite by hindering the extensive migration of Cu ions through bonding interactions. Our findings present a novel strategy for enhancing the thermoelectric performance of composite semiconductors, with potential applicability to other thermoelectric systems.

Date: 2025
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DOI: 10.1038/s41467-025-58484-0

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