The effects of disorder in superconducting materials on qubit coherence

Ran Gao (), Feng Wu, Hantao Sun, Jianjun Chen, Hao Deng, Xizheng Ma, Xiaohe Miao, Zhijun Song, Xin Wan, Fei Wang, Tian Xia, Make Ying, Chao Zhang, Yaoyun Shi, Hui-Hai Zhao and Chunqing Deng ()
Additional contact information
Ran Gao: Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area
Feng Wu: Zhongguancun Laboratory
Hantao Sun: China Telecom Quantum Information Technology Group Co., Ltd.
Jianjun Chen: Xinxiao Electronics Inc.
Hao Deng: Peking University
Xizheng Ma: Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area
Xiaohe Miao: Westlake University
Zhijun Song: Shanghai E-Matterwave Sci & Tech Co., Ltd.
Xin Wan: Zhejiang University
Fei Wang: Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area
Tian Xia: Huaxin Jushu Microelectronics Co., Ltd.
Make Ying: EXTEC Inc.
Chao Zhang: Westlake University
Yaoyun Shi: Z-Axis Quantum
Hui-Hai Zhao: Zhongguancun Laboratory
Chunqing Deng: Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area

Nature Communications, 2025, vol. 16, issue 1, 1-8

Abstract: Abstract Introducing disorder in the superconducting materials has been considered promising to enhance the electromagnetic impedance and realize noise-resilient superconducting qubits. Despite a number of pioneering implementations, the understanding of the correlation between the material disorder and the qubit coherence is still developing. Here, we demonstrate a systematic characterization of fluxonium qubits with the superinductors made by spinodal titanium-aluminum-nitride with varied disorder. From qubit noise spectroscopy, the flux noise and the dielectric loss are extracted as a measure of the coherence properties. Our results reveal that the 1/f α flux noise dominates the qubit decoherence around the flux-frustration point, strongly correlated with the material disorder; while the dielectric loss are largely similar under a wide range of material properties. From the flux-noise amplitudes, the areal density (σ) of the phenomenological spin defects and material disorder are found to be approximately correlated by $$\sigma \propto {\rho }_{xx}^{3}$$ σ ∝ ρ x x 3 , or effectively $${({k}_{F}l)}^{-3}$$ ( k F l ) − 3 . This work has provided new insights on the origin of decoherence channels beyond surface defects and within the superconductors, and could serve as a useful guideline for material design and optimization.

Date: 2025
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DOI: 10.1038/s41467-025-58745-y

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