Nanoimprint crystalithography for organic semiconductors
Shun-Xin Li,
Guan-Yao Huang,
Hong Xia (),
Tairan Fu,
Xiao-Jie Wang,
Xin Zeng,
Xinfeng Liu,
Yan-Hao Yu,
Qi-Dai Chen,
Linhan Lin () and
Hong-Bo Sun ()
Additional contact information
Shun-Xin Li: Jilin University
Guan-Yao Huang: Beijing Institute of Technology Zhuhai
Hong Xia: Jilin University
Tairan Fu: Tsinghua University
Xiao-Jie Wang: Tsinghua University
Xin Zeng: National Center for Nanoscience and Technology
Xinfeng Liu: National Center for Nanoscience and Technology
Yan-Hao Yu: Jilin University
Qi-Dai Chen: Jilin University
Linhan Lin: Tsinghua University
Hong-Bo Sun: Jilin University
Nature Communications, 2025, vol. 16, issue 1, 1-9
Abstract:
Abstract Organic semiconductor crystals (OSCs) offer mechanical flexibility, high carrier mobility, and tunable electronic structures, making them promising for optoelectronic and photonic applications. However, traditional lithographic techniques damage OSCs due to high-energy beams or solvents, leading to high defect densities, poor uniformity, and significant device-to-device variation. Existing methods also struggle to eliminate residual layers while forming independent, complex two-dimensional patterns. A chemical-free nanoimprint crystallography (NICL) method is introduced to overcome these challenges by balancing residual-layer-free nanoimprinting with the fabrication of independent, complex 2D patterns. In situ control of crystallization kinetics via temperature gradient adjustment yields OSC nanostructures with low defect densities and good uniformity. Patterning of various OSCs over a range of feature sizes is demonstrated. The patterned OSCs exhibit good lasing performance and low device-to-device variation (as low as 2%), indicating that NICL is a promising approach for fabricating high-performance, uniform OSC-based devices.
Date: 2025
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DOI: 10.1038/s41467-025-58934-9
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