Experimental determination of giant polarization in wurtzite III-nitride semiconductors

Haotian Ye, Ping Wang (), Rui Wang, Jinlin Wang, Xifan Xu, Ran Feng, Tao Wang (), Wen-Yi Tong, Fang Liu, Bowen Sheng, Wenjie Ma, Bingxuan An, Hongjian Li, Zhaoying Chen, Chun-Gang Duan, Weikun Ge, Bo Shen and Xinqiang Wang ()
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Haotian Ye: Peking University
Ping Wang: Peking University
Rui Wang: Peking University
Jinlin Wang: Peking University
Xifan Xu: Peking University
Ran Feng: Peking University
Tao Wang: Peking University
Wen-Yi Tong: East China Normal University
Fang Liu: Peking University
Bowen Sheng: Peking University
Wenjie Ma: Peking University
Bingxuan An: Peking University
Hongjian Li: Peking University
Zhaoying Chen: Peking University
Chun-Gang Duan: East China Normal University
Weikun Ge: Peking University
Bo Shen: Peking University
Xinqiang Wang: Peking University

Nature Communications, 2025, vol. 16, issue 1, 1-10

Abstract: Abstract Polarization engineering has revolutionized the photonic and electronic landscape of III-nitride semiconductors over the past decades. However, recent revelations of giant ferroelectric polarization in wurtzite III-nitrides challenge the long-standing paradigms. Here, we experimentally elucidate the polarization, including its magnitude and orientation, and its relationship to lattice polarity in III-nitrides. Those experimentally determined polarizations exceeding 1 C/m2 with an upward orientation in metal-polar wurtzite nitride compounds align with recent theoretical predictions. To reconcile these findings, a unified polarization framework is established based on the centrosymmetric layered-hexagonal reference structure. This unified framework redefines the polarization landscape in contemporary GaN heterostructures, quantum structures, and ferroelectric heterostructures. Furthermore, we predict significant tunability and a dramatic increase in sheet carrier concentration in ferroelectric ScAlN/GaN heterostructures, heralding advancements in high-power, high-frequency, and reconfigurable transistors, and non-volatile memories. This work bridges the critical gap in the understanding of polarization in both conventional and ferroelectric wurtzite nitrides, offering fundamental insights and paving the way for next-generation photonic, electronic, and acoustic devices.

Date: 2025
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DOI: 10.1038/s41467-025-58975-0

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