2D Cd metal contacts via low-temperature van der Waals epitaxy towards high-performance 2D transistors

Min Yue, Kenan Zhang, Mei Zhao (), Yinan Wang, Dong Li, Jieyuan Liang, Biyuan Zheng, Chao Zou, Yu Ye, Peijian Wang (), Lijie Zhang () and Shun Wang ()
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Min Yue: Wenzhou University
Kenan Zhang: Massachusetts Institute of Technology
Mei Zhao: Wenzhou University
Yinan Wang: Wenzhou University
Dong Li: Hunan University
Jieyuan Liang: Hunan University
Biyuan Zheng: Hunan University
Chao Zou: Wenzhou University
Yu Ye: Peking University
Peijian Wang: Wenzhou University
Lijie Zhang: Wenzhou University
Shun Wang: Wenzhou University

Nature Communications, 2025, vol. 16, issue 1, 1-12

Abstract: Abstract Two-dimensional (2D) semiconductors hold great promise for future electronics, yet the fabrication of clean ohmic electrical contacts remains a key challenge. Traditional lithography and metallization processes often introduce interfacial disorder, and recently developed electrode-transfer-based techniques are difficult to implement without contaminating the interfaces between 2D crystals and metals. Here, we demonstrate a low-temperature chemical vapor deposition (CVD)-based van der Waals (vdW) epitaxy method to grow 2D metal (Cd) electrodes, eliminating lithography, deposition, or transfer processes and enabling the damage-free integration of 2D semiconductors. This thermodynamic integration strategy significantly mitigates the interfacial disorder and metal-induced gap states (MIGS), leading to low contact resistance (RC) and near-zero barrier ohmic contacts. Cd-MoS2 field-effect transistors (FETs) exhibit RC down to 70–100 Ω·μm, on-state current densities up to 942 μA/μm, on/off ratios exceeding 108, and mobilities up to 160 cm2 V−1 s−1. These results position vdW epitaxially grown 2D metals as a promising contact technology for next-generation electronics beyond silicon.

Date: 2025
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DOI: 10.1038/s41467-025-59174-7

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