Uncovering the doping mechanism of nitric oxide in high-performance P-type WSe2 transistors

Hao-Yu Lan, Chih-Pin Lin, Lina Liu, Jun Cai, Zheng Sun, Peng Wu, Yuanqiu Tan, Shao-Heng Yang, Tuo-Hung Hou, Joerg Appenzeller and Zhihong Chen ()
Additional contact information
Hao-Yu Lan: Purdue University
Chih-Pin Lin: Purdue University
Lina Liu: Purdue University
Jun Cai: Purdue University
Zheng Sun: Purdue University
Peng Wu: Massachusetts Institute of Technology
Yuanqiu Tan: Purdue University
Shao-Heng Yang: Purdue University
Tuo-Hung Hou: National Yang Ming Chiao Tung University
Joerg Appenzeller: Purdue University
Zhihong Chen: Purdue University

Nature Communications, 2025, vol. 16, issue 1, 1-14

Abstract: Abstract Atomically thin two-dimensional (2D) semiconductors are promising candidates for beyond-silicon electronic devices. However, an excessive contact resistance due to ineffective or non-existent doping techniques hinders their technological readiness. Here, we unveil the doping mechanism of pure nitric oxide and demonstrate its effectiveness on wafer-scale grown monolayer and bilayer tungsten diselenide (1L- and 2L-WSe2) transistors, where doping bands induced by nitric oxide can realign the Schottky barrier and approach p-type unipolar transport. This doping approach, combined with a scaled high-κ dielectric, yields WSe2 transistors with high performance metrics. For monolayer WSe2, we achieved an on-state current of 300 μA/μm (at a drain-to-source voltage of –1 V and overdrive voltage of –0.8 V), contact resistance of 875 Ω·μm, peak transconductance of 400 μS/μm, and a subthreshold swing of 70 mV/dec, while preserving on/off ratios >109, minimal variability, and good stability over 24 days under moderate thermal conditions. For bilayer WSe2, the devices exhibit an on-state current of 448 μA/μm and contact resistance of 390 Ω·μm, further showcasing the scalability and effectiveness of the NO doping method. Our findings establish NO doping as a promising technique for realizing high-performance p-type 2D transistors and advancing next-generation ultra-scaled electronic devices.

Date: 2025
References: Add references at CitEc
Citations:

Downloads: (external link)
https://www.nature.com/articles/s41467-025-59423-9 Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-59423-9

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/s41467-025-59423-9

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().