Highly efficient light-emitting diodes via self-assembled InP quantum dots

Hui Li, Jingyuan Zhang, Wen Wen (), Yuyan Zhao, Hanfei Gao, Bingqiang Ji (), Yunjun Wang, Lei Jiang and Yuchen Wu ()
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Hui Li: Chinese Academy of Sciences
Jingyuan Zhang: Shanxi Datong University
Wen Wen: University of Science and Technology of China
Yuyan Zhao: University of Science and Technology of China
Hanfei Gao: University of Science and Technology of China
Bingqiang Ji: Beihang University
Yunjun Wang: Ltd. (Mesolight)
Lei Jiang: Chinese Academy of Sciences
Yuchen Wu: Chinese Academy of Sciences

Nature Communications, 2025, vol. 16, issue 1, 1-9

Abstract: Abstract Heavy-metal-free quantum dot light-emitting diodes (QLEDs) face commercialization challenges due to low efficiency and poor stability. Spin-coated quantum dot films often create charge leakage areas, limiting device performance. Here, we develop an evaporative-driven self-assembly strategy that enables the preparation of uniform and dense InP-based quantum dot films. During device operation, these films effectively suppress performance degradation caused by charge leakage. QLEDs with uniform and dense InP-based quantum dot films achieve high external quantum efficiency (26.6%) and luminance (1.4 × 105 cd m−2), along with considerable stability (extrapolated T50 lifetime of 4026 hours at 1000 cd m−2). For a 2 × 3 cm2 InP-based device, the peak external quantum efficiency reaches 21.1%. By combining high-performance QLEDs with lithography technology, we fabricate miniaturized QLEDs with a minimum pixel size of 3 μm, achieving a resolution as high as 5080 pixels per inch and a peak external quantum efficiency of 22.6%.

Date: 2025
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DOI: 10.1038/s41467-025-59527-2

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