High-performance p-type bilayer WSe2 field effect transistors by nitric oxide doping

Subir Ghosh, Muhtasim Ul Karim Sadaf, Andrew R. Graves, Yikai Zheng, Andrew Pannone, Samriddha Ray, Chung-Yu Cheng, Jeremy Guevara, Joan M. Redwing and Saptarshi Das ()
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Subir Ghosh: Penn State University
Muhtasim Ul Karim Sadaf: Penn State University
Andrew R. Graves: Penn State University
Yikai Zheng: Penn State University
Andrew Pannone: Penn State University
Samriddha Ray: Penn State University
Chung-Yu Cheng: Penn State University
Jeremy Guevara: Florida International University
Joan M. Redwing: Penn State University
Saptarshi Das: Penn State University

Nature Communications, 2025, vol. 16, issue 1, 1-13

Abstract: Abstract Two-dimensional (2D) materials are promising candidates for next-generation electronics, but the realization of high-performance p-type 2D field-effect transistors (FETs) has remained challenging, hindering the development of fully integrated 2D complementary metal-oxide-semiconductor (CMOS) technology. Here, we present p-type 2D FETs based on bilayer WSe2 synthesized via an industry-compatible metal-organic chemical vapor deposition (MOCVD) process. These devices achieve on-state current as high as 421 μA/μm at a drain voltage of 1 V and a gate overdrive voltage of 2.5 V, an on/off current ratio exceeding 107, and a subthreshold swing as low as 75 mV/decade. Key device parameters include a contact resistance down to 1.3 kΩ-µm, a field-effect hole mobility of 16.1 cm2V-1s−1, and a peak transconductance of 250 µS/µm. This high performance is enabled by p-type doping through nitric oxide (NO) treatment at 100 °C for 30 minutes. Furthermore, we scaled the channel length down to 50 nm, integrated a high-κ gate dielectric with an equivalent oxide thickness of ~2.3 nm, and analyzed over 300 devices. We also investigated the temporal and thermal stability of p-type doping, providing insights into the underlying NO doping mechanism. Our findings help to address a long-standing challenge in 2D materials research and offer a promising solution to realize high-performance p-type 2D FETs for future CMOS applications.

Date: 2025
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DOI: 10.1038/s41467-025-59684-4

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