Configurable kinetics of polarization switching via ion migration in ferroionic CuInP2S6

Lei Liang, Er Pan, Guiming Cao (), Jiangang Chen, Ruixue Wang, Biao Dong, Qing Liu, Xiong Chen, Xiao Luo, Yongfa Kong, Wenwu Li () and Fucai Liu ()
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Lei Liang: University of Electronic Science and Technology of China
Er Pan: University of Electronic Science and Technology of China
Guiming Cao: Xi Chang University
Jiangang Chen: University of Electronic Science and Technology of China
Ruixue Wang: University of Electronic Science and Technology of China
Biao Dong: University of Electronic Science and Technology of China
Qing Liu: University of Electronic Science and Technology of China
Xiong Chen: Xi’an Jiaotong University
Xiao Luo: University of Electronic Science and Technology of China
Yongfa Kong: Nankai University
Wenwu Li: Fudan University
Fucai Liu: University of Electronic Science and Technology of China

Nature Communications, 2025, vol. 16, issue 1, 1-10

Abstract: Abstract Ferroelectric materials are promising for developing non-volatile memory, neuromorphic computing, and photovoltaic technologies. Taking advantage of variable switching kinetics provides an important strategy for designing multifunctional ferroelectric devices. However, the conventional ferroelectrics due to the unmovable atomic species generally own a single switching kinetics, thus versatile and configurable switching kinetics still remain challenging. In this work, we systematically investigate the switching kinetics of the van der Waals ferroionic CuInP2S6 through polarization-determined ferroelectric photovoltaic behaviors. Based on the time- and field-dependent polarization switching and numerical simulation, we discover three switching modes, including intralayer switching, interlayer switching and intralayer-interlayer coupling switching in CuInP2S6. Through designing the poling voltage amplitude and width, we achieve the configurable kinetic control of polarization switching in CuInP2S6, enabling tunable binary, gradual and accumulative switching with defined poling voltages in a single device. The work demonstrated here is instructive for the development of nanoscale multifunctional ferroelectric devices.

Date: 2025
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DOI: 10.1038/s41467-025-59697-z

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