Se-mediated dry transfer of wafer-scale 2D semiconductors for advanced electronics

Xingchao Zhang, Lanying Zhou, Shuopei Wang, Tong Li, Hongyue Du, Yuchao Zhou, Jieying Liu, Jiaojiao Zhao, Liangfeng Huang, Hua Yu, Peng Chen, Na Li () and Guangyu Zhang ()
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Xingchao Zhang: Songshan Lake Materials Laboratory
Lanying Zhou: Songshan Lake Materials Laboratory
Shuopei Wang: Songshan Lake Materials Laboratory
Tong Li: Songshan Lake Materials Laboratory
Hongyue Du: Songshan Lake Materials Laboratory
Yuchao Zhou: Songshan Lake Materials Laboratory
Jieying Liu: Songshan Lake Materials Laboratory
Jiaojiao Zhao: Songshan Lake Materials Laboratory
Liangfeng Huang: Songshan Lake Materials Laboratory
Hua Yu: Songshan Lake Materials Laboratory
Peng Chen: Southern University of Science and Technology
Na Li: Songshan Lake Materials Laboratory
Guangyu Zhang: Songshan Lake Materials Laboratory

Nature Communications, 2025, vol. 16, issue 1, 1-8

Abstract: Abstract Two-dimensional (2D) semiconductors hold a great promise for next-generation electronics. Yet, achieving a clean and intact transfer of 2D films on device-compatible substrates remains a critical challenge. Here, we report an approach that uses selenium (Se) as the intermediate layer to facilitate the transfer of wafer-scale molybdenum disulfide (MoS2) monolayers on target substrates with high surface/interface cleanness and structural integrity. Our method enables nearly 100% film intactness of the transferred 2D semiconductors which are free from residues or contaminants. Characterizations reveal that the Se-assisted dry-transfer yields MoS2 film with superior quality compared to conventional transfer techniques. The fabricated field-effect transistors (FETs) and logic circuits based on these transferred films demonstrate remarkable electrical performance, including on/off current ratios up to 2.7×1010 and electron mobility of 71.3 cm2·V-1·s-1 for individual FETs. Our results underscore the feasibility of this dry-transfer technology for fabricating high-performance 2D electronics that are fully compatible with standard semiconductor processes, paving the way for integrating 2D materials into advanced electronic applications.

Date: 2025
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DOI: 10.1038/s41467-025-59803-1

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