Synthesis of hexagonal boron arsenide nanosheets for low-power consumption flexible memristors

Zenghui Wu, Yuxuan Zhang, Boxiang Gao, You Meng, He Shao, Dengji Li, Pengshan Xie, Weijun Wang, Bowen Li, Chenxu Zhang, Yi Shen, Di Yin, Dong Chen, Quan Quan, SenPo Yip and Johnny C. Ho ()
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Zenghui Wu: City University of Hong Kong
Yuxuan Zhang: City University of Hong Kong
Boxiang Gao: City University of Hong Kong
You Meng: City University of Hong Kong
He Shao: City University of Hong Kong
Dengji Li: City University of Hong Kong
Pengshan Xie: City University of Hong Kong
Weijun Wang: City University of Hong Kong
Bowen Li: City University of Hong Kong
Chenxu Zhang: City University of Hong Kong
Yi Shen: City University of Hong Kong
Di Yin: City University of Hong Kong
Dong Chen: City University of Hong Kong
Quan Quan: City University of Hong Kong
SenPo Yip: Kyushu University
Johnny C. Ho: City University of Hong Kong

Nature Communications, 2025, vol. 16, issue 1, 1-10

Abstract: Abstract Boron arsenide has recently attracted significant attention for its thermal and electronic properties. However, its lengthy growth process and bulk structure limit its application in advanced semiconductor systems. In this study, we introduce a method for synthesizing ultrathin crystalline hexagonal boron arsenide (h-BAs) nanosheets in large quantities via an in-situ chemical reaction of sodium borohydride with elemental arsenic in a low-pressure hydrogen atmosphere. We successfully fabricated h-BAs-based memory devices with ON/OFF current ratios up to 109, low energy consumption of less than 4.65 pJ, and commendable stability. Furthermore, we have developed flexible h-BAs-based memristors with good stability and robustness. This research not only provides a promising avenue for synthesizing h-BAs nanosheets, but also underscores their potential in the development of next-generation electronic devices.

Date: 2025
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DOI: 10.1038/s41467-025-60038-3

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