Conformal hexagonal boron nitride encapsulation of graphene-skinned glass fiber fabric for enhanced electrical stability

Xiaomin Yang, Yuyao Yang, Shuting Cheng, Hao Yuan, Xuzhao Gai, Wenjuan Li, Fushun Liang, Fan Yang, Kangyi Zheng, Longfei Liu, Wenjing Jiang, Qingxu Su, Xinyu Mao, Jingnan Wang, Yuejie Zhao, Enshan Liu, Zhongfan Liu () and Yue Qi ()
Additional contact information
Xiaomin Yang: Beijing Graphene Institute (BGI)
Yuyao Yang: Beijing Graphene Institute (BGI)
Shuting Cheng: Beijing Graphene Institute (BGI)
Hao Yuan: Beijing Graphene Institute (BGI)
Xuzhao Gai: Beijing Graphene Institute (BGI)
Wenjuan Li: Beijing Graphene Institute (BGI)
Fushun Liang: Beijing Graphene Institute (BGI)
Fan Yang: Beijing Graphene Institute (BGI)
Kangyi Zheng: Beijing Graphene Institute (BGI)
Longfei Liu: Beijing Graphene Institute (BGI)
Wenjing Jiang: Beijing Graphene Institute (BGI)
Qingxu Su: Beijing Graphene Institute (BGI)
Xinyu Mao: Beijing Graphene Institute (BGI)
Jingnan Wang: Beijing Graphene Institute (BGI)
Yuejie Zhao: Beijing Graphene Institute (BGI)
Enshan Liu: Beijing Graphene Institute (BGI)
Zhongfan Liu: Beijing Graphene Institute (BGI)
Yue Qi: Beijing Graphene Institute (BGI)

Nature Communications, 2025, vol. 16, issue 1, 1-12

Abstract: Abstract Encapsulation is crucial for protecting graphene devices, but traditional whole-package encapsulations usually add bulky structures and reduce their flexibility. Hexagonal boron nitride (h-BN) holds potential for graphene encapsulation, but faces challenges in large-area acquisition and conformal coverage due to limitations in exfoliation and transfer techniques. Graphene-skinned glass fiber fabric (GGFF), made via graphene CVD growth on each fiber of a glass fiber fabric, consists of a hierarchical conductive network, but pressure/deformation-induced inter-fiber contact resistance fluctuations destabilize its electrical conduction. Whole-package encapsulation cannot resolve this, as fails to insulate inter-fiber contacts. Herein, thick, high-quality h-BN films are CVD-grown on each fiber in GGFF, achieving conformal encapsulation. This unlocks conductive network in GGFF, stabilizing electrical conduction while preserving structure stability and flexibility. This also improves GGFF’s resistance to doping and oxidation, extending its service life. This encapsulation strategy is broadly applicable to other two-dimensional materials and complex device structures, promoting reliable nanoelectronics in demanding environments.

Date: 2025
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DOI: 10.1038/s41467-025-60324-0

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