Terahertz field effect in a two-dimensional semiconductor

Tomoki Hiraoka (), Sandra Nestler, Wentao Zhang, Simon Rossel, Hassan A. Hafez, Savio Fabretti, Heike Schlörb, Andy Thomas and Dmitry Turchinovich ()
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Tomoki Hiraoka: Universität Bielefeld
Sandra Nestler: Helmholtzstraße 20
Wentao Zhang: Universität Bielefeld
Simon Rossel: Universität Bielefeld
Hassan A. Hafez: Universität Bielefeld
Savio Fabretti: Universität Bielefeld
Heike Schlörb: Helmholtzstraße 20
Andy Thomas: Helmholtzstraße 20
Dmitry Turchinovich: Universität Bielefeld

Nature Communications, 2025, vol. 16, issue 1, 1-11

Abstract: Abstract Layered two-dimensional (2D) materials offer many promising avenues for advancing modern electronics, thanks to their tunable optical, electronic, and magnetic properties. Applying a strong electric field perpendicular to the layers, typically at the MV/cm level, is a highly effective way to control these properties. However, conventional methods to induce such fields employ electric circuit - based gating techniques, which are restricted to microwave response rates and face challenges in achieving device-compatible ultrafast, sub-picosecond control. Here, we demonstrate an ultrafast field effect in atomically thin MoS2 embedded within a hybrid 3D-2D terahertz nanoantenna. This nanoantenna transforms an incoming terahertz electric field into a vertical ultrafast gating field in MoS2, simultaneously enhancing it to the MV/cm level. The terahertz field effect is observed as a coherent terahertz-induced Stark shift of exciton resonances in MoS2. Our results offer a promising strategy to tune and operate ultrafast optoelectronic devices based on 2D materials.

Date: 2025
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DOI: 10.1038/s41467-025-60588-6

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